Mosfet Modeling Vlsi Simulation (31 results)
- Softcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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£ 62.56
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Language: English
Published by World Scientific Publishing Co Pte Ltd, 2007
- Softcover
Seller: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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£ 64.60
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PAP. Condition: New. New Book. Shipped from UK. Established seller since 2000.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Softcover
Seller: Rarewaves.com USA, London, LONDO, United KingdomRarewaves.com USA
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£ 66.07
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Paperback. Condition: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cit…ed among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
- Softcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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£ 65.87
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Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Co Pte Ltd, 2007
- Softcover
Seller: PBShop.store UK, Fairford, GLOS, United KingdomPBShop.store UK
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£ 64.30
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PAP. Condition: New. New Book. Shipped from UK. Established seller since 2000.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Softcover
Seller: Rarewaves USA, OSWEGO, IL, U.S.A.Rarewaves USA
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£ 73.72
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Paperback. Condition: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cit…ed among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Language: English
Published by World Scientific Publishing Co Pte Ltd, Singapore, 2007
- Softcover
Seller: Grand Eagle Retail, Bensenville, IL, U.S.A.Grand Eagle Retail
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£ 76.07
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Paperback. Condition: new. Paperback. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was t…he most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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£ 59.81
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Condition: New.
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 66.17
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Condition: New. In.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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£ 64.26
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Condition: As New. Unread book in perfect condition.
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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£ 84.77
£ 12.50 shippingShips from United Kingdom to U.S.A.Quantity: 2 available
Paperback. Condition: Brand New. reprint edition. 632 pages. 9.02x6.22x1.30 inches. In Stock.
- Hardcover
Seller: Basi6 International, Irving, TX, U.S.A.Basi6 International
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£ 101.60
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Softcover
Seller: Rarewaves USA United, OSWEGO, IL, U.S.A.Rarewaves USA United
Contact seller5-star sellerCondition: New
£ 73.38
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Paperback. Condition: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cit…ed among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Softcover
Seller: Rarewaves.com UK, London, United KingdomRarewaves.com UK
Contact seller5-star sellerCondition: New
£ 59.82
£ 65.00 shippingShips from United Kingdom to U.S.A.Quantity: 9 available
Paperback. Condition: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cit…ed among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Language: English
Published by World Scientific Publishing Co Pte Ltd, Singapore, 2007
- Softcover
Seller: AussieBookSeller, Truganina, VIC, AustraliaAussieBookSeller
Contact seller5-star sellerCondition: New
£ 113.46
£ 27.64 shippingShips from Australia to U.S.A.Quantity: 1 available
Paperback. Condition: new. Paperback. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was t…he most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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£ 197.21
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Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, 2007
- Hardcover
Seller: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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£ 199.25
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HRD. Condition: New. New Book. Shipped from UK. Established seller since 2000.
- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: Used - As new
£ 213.08
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Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Co Pte Ltd, 2007
- Hardcover
Seller: PBShop.store UK, Fairford, GLOS, United KingdomPBShop.store UK
Contact seller5-star sellerCondition: New
£ 204.30
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HRD. Condition: New. New Book. Shipped from UK. Established seller since 2000.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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£ 198.99
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Condition: New.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: Used - As new
£ 204.85
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Condition: As New. Unread book in perfect condition.
- Hardcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 209.53
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Condition: New. In.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Hardcover
Seller: Rarewaves.com USA, London, LONDO, United KingdomRarewaves.com USA
Contact seller5-star sellerCondition: New
£ 263.87
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Hardback. Condition: New. Illustrated. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was…the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
- Hardcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
Contact seller5-star sellerCondition: New
£ 268.05
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Hardcover. Condition: Brand New. illustrated edition. 632 pages. 9.50x6.50x1.25 inches. In Stock.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Hardcover
Seller: Rarewaves.com UK, London, United KingdomRarewaves.com UK
Contact seller5-star sellerCondition: New
£ 242.53
£ 65.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Hardback. Condition: New. Illustrated. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was…the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
- Softcover
- Print on Demand
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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£ 85.03
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehe…nsive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
- Softcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
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£ 104.23
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. KlappentextrnrnA reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, ov…er a decade ago. The first c.
More images- Softcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
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£ 108.06
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Taschenbuch. Condition: Neu. MOSFET MODELING FOR VLSI SIMULATION | Arora Narain | Taschenbuch | Kartoniert / Broschiert | Englisch | 2007 | World Scientific | EAN 9789813203303 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
- Hardcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
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£ 225.22
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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Deals with the MOS Field Effect Transistor models that are derived from basic semiconductor theory. This book discusses how to measure device model parameters required for circuit simulations. It emphasizes…the assumptions used to arrive at the models, so t.
More images- Hardcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
£ 233.46
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Buch. Condition: Neu. MOSFET MODELING FOR VLSI SIMULATION | Arora Narain | Buch | Gebunden | Englisch | 2007 | World Scientific | EAN 9789812568625 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
