Arora Narain (44 results)
- Softcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Language: English
Published by World Scientific Publishing Co Pte Ltd, 2007
- Softcover
Seller: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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PAP. Condition: New. New Book. Shipped from UK. Established seller since 2000.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Softcover
Seller: Rarewaves.com USA, London, LONDO, United KingdomRarewaves.com USA
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£ 66.23
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Paperback. Condition: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cit…ed among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
- Softcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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£ 65.62
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Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Co Pte Ltd, 2007
- Softcover
Seller: PBShop.store UK, Fairford, GLOS, United KingdomPBShop.store UK
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£ 64.30
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PAP. Condition: New. New Book. Shipped from UK. Established seller since 2000.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Softcover
Seller: Rarewaves USA, OSWEGO, IL, U.S.A.Rarewaves USA
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£ 73.90
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Paperback. Condition: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cit…ed among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Language: English
Published by World Scientific Publishing Co Pte Ltd, Singapore, 2007
- Softcover
Seller: Grand Eagle Retail, Bensenville, IL, U.S.A.Grand Eagle Retail
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£ 76.25
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Paperback. Condition: new. Paperback. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was t…he most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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£ 59.81
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- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 66.17
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- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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£ 64.26
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Condition: As New. Unread book in perfect condition.
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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£ 84.99
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Paperback. Condition: Brand New. reprint edition. 632 pages. 9.02x6.22x1.30 inches. In Stock.
Language: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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£ 108.04
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Condition: As New. Unread book in perfect condition.
Language: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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£ 109.23
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Condition: New.
Language: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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£ 108.20
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Condition: New. pp. 632.
Language: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 96.88
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Condition: New. In.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Softcover
Seller: Rarewaves USA United, OSWEGO, IL, U.S.A.Rarewaves USA United
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£ 73.38
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Paperback. Condition: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cit…ed among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Language: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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£ 96.87
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Condition: New.
Language: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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£ 110.79
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Condition: New. pp. 632 270 Figures, 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.
Language: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: Used - As new
£ 107.94
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Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 2007
- Softcover
Seller: Rarewaves.com UK, London, United KingdomRarewaves.com UK
Contact seller5-star sellerCondition: New
£ 59.82
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Paperback. Condition: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cit…ed among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Language: English
Published by World Scientific Publishing Co Pte Ltd, Singapore, 2007
- Softcover
Seller: AussieBookSeller, Truganina, VIC, AustraliaAussieBookSeller
Contact seller5-star sellerCondition: New
£ 113.69
£ 27.71 shippingShips from Australia to U.S.A.Quantity: 1 available
Paperback. Condition: new. Paperback. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was t…he most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
More imagesLanguage: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: preigu, Osnabrück, Germanypreigu
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£ 84.44
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Taschenbuch. Condition: Neu. MOSFET Models for VLSI Circuit Simulation | Theory and Practice | Narain D. Arora | Taschenbuch | Computational Microelectronics | xxii | Englisch | 2012 | Springer | EAN 9783709192498 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann…[at]springer[dot]com | Anbieter: preigu.
Language: English
Published by Springer Vienna, 2013
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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£ 134.02
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Paperback. Condition: Brand New. 632 pages. 9.61x6.69x1.43 inches. In Stock.
Language: English
Published by Springer, 2012
Series: Computational Microelectronics, Book 7 of 17. Book 7 of 17 - Computational Microelectronics
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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£ 102.59
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over t…he past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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£ 199.15
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Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, 2007
- Hardcover
Seller: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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£ 201.20
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HRD. Condition: New. New Book. Shipped from UK. Established seller since 2000.
Language: English
Published by World Scientific Publishing Co Pte Ltd, 2007
- Hardcover
Seller: PBShop.store UK, Fairford, GLOS, United KingdomPBShop.store UK
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£ 204.30
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HRD. Condition: New. New Book. Shipped from UK. Established seller since 2000.
- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: Used - As new
£ 212.75
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Condition: As New. Unread book in perfect condition.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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£ 201.42
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Condition: New.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: Used - As new
£ 204.92
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Condition: As New. Unread book in perfect condition.
