Wang Guilei (56 results)
Language: English
Published by Singapore, Springer., 2019
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
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XVI, 115 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Springer Theses. Recognizing Outstanding Ph.D. Research. Sprache: Engli…sch.
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Language: English
Published by Springer, 2019
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
- Hardcover
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Language: English
Published by Springer, 2020
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
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Language: English
Published by Springer, 2019
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
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Language: English
Published by Springer, 2020
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Published by Springer, 2020
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Language: English
Published by Springer, 2019
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Published by Springer, 2020
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
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Language: English
Published by Springer, 2019
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
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Language: English
Published by Springer, 2020
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Condition: New. pp. XVI, 115 1st ed. 2019 edition NO-PA16APR2015-KAP.
Language: English
Published by Springer Nature Singapore, 2019
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
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Condition: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional trans…istor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Language: English
Published by Springer, 2019
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
- Hardcover
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Hardcover. Condition: Brand New. 132 pages. 9.25x6.10x0.55 inches. In Stock.
Language: English
Published by Springer, 2020
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
- Softcover
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Taschenbuch. Condition: Neu. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond | Guilei Wang | Taschenbuch | Springer Theses | xvi | Englisch | 2020 | Springer | EAN 9789811500480 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 He…idelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Language: English
Published by Springer, 2020
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
- Softcover
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Language: English
Published by Springer, 2019
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
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Language: English
Published by Springer Nature Singapore, Springer Nature Singapore, 2019
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
- Hardcover
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures…, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node.The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Language: English
Published by Springer, Springer, 2020
Series: Springer Theses, Book 652 of 797. Book 652 of 797 - Springer Theses
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.As the CMOS technology roadmap calls for continuously downscaling traditional transistor str…uctures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node.The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
