Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Language: English

Published by Springer, 2020

9811500487 / 9789811500480

Series: Book 652 of 797 - Springer Theses

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Druck auf Anfrage Neuware - Printed after ordering - This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node.The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.…

Seller Inventory # 9789811500480

Title
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
Author
Guilei Wang
Publisher
Springer
Publication year
2020
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
9811500487
ISBN 13
9789811500480
Item weight
213 grams
Dimensions
235x155x8 mm
Series
Book 652 of 797: Springer Theses

AHA-BUCH GmbH

Einbeck, Germany

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