Language: English
Published by Materials Research Society (MRS), 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Published by Cambridge University Press 6/5/1997, 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Hardback or Cased Book. Condition: New. Environmental, Safety, and Health Issues in IC Production. Book.
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Published by Materials Research Society (MRS), 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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ISBN 10: 1558993517 ISBN 13: 9781558993518
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ISBN 10: 3908451469 ISBN 13: 9783908451464
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Language: English
Published by Materials Research Society (MRS), 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Language: English
Published by Materials Research Society (MRS), 1997
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Published by Materials Research Society, 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Published by Materials Research Society, 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Condition: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Bowling, Allen C.; Heyns, Marc; Reif, Rafael; Tonti, Alessandro. Series: MRS Proceedings. Num Pages: 168 pages, black & white illustrations. BIC Classification: KNXC; TGM. Category: (U) Tertiary Education (US: College). Dimension: 230 x 156 x 11. Weight in Grams: 400. . 1997. Hardback. . . . . Books ship from the US and Ireland.
Language: English
Published by Materials Research Society, 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Condition: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Bowling, Allen C.; Heyns, Marc; Reif, Rafael; Tonti, Alessandro. Series: MRS Proceedings. Num Pages: 168 pages, black & white illustrations. BIC Classification: KNXC; TGM. Category: (U) Tertiary Education (US: College). Dimension: 230 x 156 x 11. Weight in Grams: 400. . 1997. Hardback. . . . .
Language: English
Published by Materials Research Society, 1995
ISBN 10: 1558992898 ISBN 13: 9781558992894
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Published by Cambridge University Press, 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - It is clear that concern for the preservation of the environment is growing. The IC industry is reputed to be a clean one, and the introduction of electronic systems has played a pivotal role in developing technologies that help to protect the environment. However, it must also be realized that the electronic industry consumes huge amounts of energy, chemicals, technical gases and even water. This book provides an overview of the available scientific information on environmentally benign IC production. A broad range of topics is addressed including work on resource reduction for chemicals, gases and DI water, reuse or recycling of chemicals, waste treatment strategies, environmentally friendly alternative technologies and analytical technologies for environmental studies. Undoubtedly, environmental concerns are leading to drastic changes in state-of-the-art processing, and new technologies are emerging from the strive towards lowering the environmental impact of the IC industry.
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Paperback. Condition: Good. Solid State Phenomena, Vols. 65-66. Name on first page, else no markings noted. Gentle usage wear.
Language: English
Published by Materials Research Society (MRS), 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Published by Materials Research Society (MRS), 1997
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Language: English
Published by Materials Research Society (MRS), 1997
ISBN 10: 1558993517 ISBN 13: 9781558993518
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Condition: New. pp. 408.
Taschenbuch. Condition: Neu. Advanced Gate Stacks for High-Mobility Semiconductors | Athanasios Dimoulas (u. a.) | Taschenbuch | Springer Series in Advanced Microelectronics | xxii | Englisch | 2010 | Springer | EAN 9783642090714 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Language: English
Published by Springer Berlin Heidelberg, 2010
ISBN 10: 3642090710 ISBN 13: 9783642090714
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
Condition: Sehr gut. Zustand: Sehr gut | Seiten: 408 | Sprache: Englisch | Produktart: Bücher | This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
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Published by Springer Berlin Heidelberg, Springer Berlin Heidelberg, 2007
ISBN 10: 3540714901 ISBN 13: 9783540714903
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
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Published by Springer Berlin Heidelberg, 2007
ISBN 10: 3642090710 ISBN 13: 9783642090714
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Condition: New. Brand New ! Fast Delivery "International Edition " and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 4-6 Working days .and we do have flat rate for up to 2LB. Extra shipping charges will be requested This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
Language: English
Published by Scitec Publications, Ltd., 2003
ISBN 10: 3908450780 ISBN 13: 9783908450788
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