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Athanasios Dimoulas (44 results)
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Condition: As New. Unread book in perfect condition.
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2d Materials for Nanoelectronics
Book 7 of 21: Series in Materials Science and EngineeringSeller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: As New. Unread book in perfect condition.
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Condition: New. 1st edition NO-PA16APR2015-KAP.
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2D Materials for Nanoelectronics
Book 7 of 21: Series in Materials Science and EngineeringLanguage: English
Published by Taylor & Francis Ltd, 2021
ISBN 10: 0367783037 ISBN 13: 9780367783037
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Seller rating 5 out of 5 stars
Paperback / softback. Condition: New. New copy - Usually dispatched within 4 working days.
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2d Materials for Nanoelectronics
Book 7 of 21: Series in Materials Science and EngineeringSeller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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hardcover. Condition: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority!
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Paperback. Condition: Brand New. 483 pages. 9.25x6.14x1.22 inches. In Stock.
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Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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2D Materials for Nanoelectronics
Book 7 of 21: Series in Materials Science and EngineeringLanguage: English
Published by Taylor & Francis Ltd Mär 2021, 2021
ISBN 10: 0367783037 ISBN 13: 9780367783037
Taschenbuch. Condition: Neu. Neuware.
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Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics, 27)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 127.60
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics, 27)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 137.84
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Condition: New. pp. 408.
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Taschenbuch. Condition: Neu. Advanced Gate Stacks for High-Mobility Semiconductors | Athanasios Dimoulas (u. a.) | Taschenbuch | Springer Series in Advanced Microelectronics | xxii | Englisch | 2010 | Springer | EAN 9783642090714 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Advanced Gate Stacks for High-Mobility Semiconductors
Language: English
Published by Springer Berlin Heidelberg, 2010
ISBN 10: 3642090710 ISBN 13: 9783642090714
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
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Condition: Sehr gut. Zustand: Sehr gut | Seiten: 408 | Sprache: Englisch | Produktart: Bücher | This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
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Advanced Gate Stacks for High-Mobility Semiconductors
Language: English
Published by Springer Berlin Heidelberg, Springer Berlin Heidelberg, 2007
ISBN 10: 3540714901 ISBN 13: 9783540714903
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
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Hardcover. Condition: Like New. Like New. book.
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Advanced Gate Stacks for High-Mobility Semiconductors
Language: English
Published by Springer Berlin Heidelberg, 2007
ISBN 10: 3642090710 ISBN 13: 9783642090714
Paperback. Condition: Brand New. 383 pages. 9.00x6.00x0.92 inches. In Stock.
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2D Materials for Nanoelectronics (Series in Materials Science and Engineering)
Book 7 of 21: Series in Materials Science and EngineeringLanguage: English
Published by Taylor & Francis Group, 2016
ISBN 10: 1498704174 ISBN 13: 9781498704175
Condition: New. pp. 484.
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International EditionCondition: New. Brand New ! Fast Delivery "International Edition " and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 4-6 Working days .and we do have flat rate for up to 2LB. Extra shipping charges will be requested This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
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2D Materials for Nanoelectronics (Series in Materials Science and Engineering)
Book 7 of 21: Series in Materials Science and EngineeringLanguage: English
Published by Taylor & Francis Group, 2016
ISBN 10: 1498704174 ISBN 13: 9781498704175
Condition: New. pp. 484.
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2D Materials for Nanoelectronics
Book 7 of 21: Series in Materials Science and EngineeringSeller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Gebunden. Condition: New.
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2D Materials for Nanoelectronics (Series in Materials Science and Engineering)
Book 7 of 21: Series in Materials Science and EngineeringLanguage: English
Published by Taylor & Francis Group, 2016
ISBN 10: 1498704174 ISBN 13: 9781498704175
Condition: New. pp. 484.
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2D Materials for Nanoelectronics
Book 7 of 21: Series in Materials Science and EngineeringLanguage: English
Published by Taylor & Francis Apr 2016, 2016
ISBN 10: 1498704174 ISBN 13: 9781498704175
Buch. Condition: Neu. Neuware.
