Introduction Semiconductor Device Modelling by Snowden Christopher (21 results)
- Hardcover
Seller: Budget Books, Pasadena, U.S.A.Budget Books
Contact seller5-star sellerCondition: Used - Near fine
£ 30.53
£ 3.70 shippingShips within U.S.A.Quantity: 1 available
Hardcover. Condition: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover.
- Softcover
Seller: GreatBookPrices, Columbia, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: Used - As new
£ 46.67
£ 1.96 shippingShips within U.S.A.Quantity: Over 20 available
Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG 1987
- Softcover
Seller: Rarewaves.com USA, London, United KingdomRarewaves.com USA
Contact seller5-star sellerCondition: New
£ 48.76
Free ShippingShips from United Kingdom to U.S.A.Quantity: 13 available
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFE…Ts), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
- Softcover
Seller: GreatBookPrices, Columbia, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: New
£ 46.75
£ 1.96 shippingShips within U.S.A.Quantity: Over 20 available
Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, Singapore 1987
- Softcover
Seller: Grand Eagle Retail, Bensenville, U.S.A.Grand Eagle Retail
Contact seller5-star sellerCondition: New
£ 54.72
Free ShippingShips within U.S.A.Quantity: 1 available
Paperback. Condition: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect trans…istors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG 1987
- Softcover
Seller: Rarewaves USA, OSWEGO, U.S.A.Rarewaves USA
Contact seller5-star sellerCondition: New
£ 54.85
Free ShippingShips within U.S.A.Quantity: Over 20 available
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFE…Ts), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: New
£ 43.64
£ 15.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New.
Published by Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
- Hardcover
Seller: Antiquariaat Ovidius, Bredevoort, NetherlandsAntiquariaat Ovidius
Contact seller4-star sellerCondition: Used
£ 21.31
£ 18.97 shippingShips from Netherlands to U.S.A.Quantity: 1 available
Add to basketCondition: Gebraucht / Used. 1986. Hardcover. xv,222pp.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: Used - As new
£ 48.20
£ 15.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: As New. Unread book in perfect condition.
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
Contact seller5-star sellerCondition: New
£ 62.92
£ 10.00 shippingShips from United Kingdom to U.S.A.Quantity: 2 available
Paperback. Condition: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
- Softcover
Seller: GreatBookPrices, Columbia, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: Used - As new
£ 76.03
£ 1.96 shippingShips within U.S.A.Quantity: Over 20 available
Condition: As New. Unread book in perfect condition.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: Used - As new
£ 75.97
£ 15.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: As New. Unread book in perfect condition.
- Softcover
Seller: GreatBookPrices, Columbia, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: New
£ 92.50
£ 1.96 shippingShips within U.S.A.Quantity: Over 20 available
Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG 1987
- Softcover
Seller: Rarewaves USA United, OSWEGO, U.S.A.Rarewaves USA United
Contact seller5-star sellerCondition: New
£ 55.37
£ 37.05 shippingShips within U.S.A.Quantity: Over 20 available
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFE…Ts), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: New
£ 77.86
£ 15.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG 1987
- Softcover
Seller: Rarewaves.com UK, London, United KingdomRarewaves.com UK
Contact seller5-star sellerCondition: New
£ 43.63
£ 65.00 shippingShips from United Kingdom to U.S.A.Quantity: 13 available
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFE…Ts), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Language: English
Published by World Scientific Publishing Co Pte Ltd, Singapore 1987
- Softcover
Seller: AussieBookSeller, Truganina, AustraliaAussieBookSeller
Contact seller5-star sellerCondition: New
£ 83.60
£ 27.42 shippingShips from Australia to U.S.A.Quantity: 1 available
Paperback. Condition: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect trans…istors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
Contact seller5-star sellerCondition: Used - Very good
£ 59.02
£ 90.53 shippingShips from Germany to U.S.A.Quantity: 1 available
Condition: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher | This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transi…stors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
- Softcover
Seller: Mispah books, Redhill, United KingdomMispah books
Contact seller4-star sellerCondition: New
£ 129.00
£ 25.00 shippingShips from United Kingdom to U.S.A.Quantity: 1 available
paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
- Softcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
Contact seller5-star sellerCondition: New
£ 46.77
£ 42.24 shippingShips from Germany to U.S.A.Quantity: Over 20 available
Kartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Klappentext.
- Softcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
Contact seller4-star sellerCondition: New
£ 70.70
£ 42.24 shippingShips from Germany to U.S.A.Quantity: Over 20 available
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt.
