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  • Language: English

    Published by CRC Press, 2024

    1032489502 / 9781032489506

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  • Language: English

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  • Language: English

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  • Language: English

    Published by CRC Press -, 2024

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  • Language: English

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    Paperback. Condition: New. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.…

  • Language: English

    Published by CRC Press, 2024

    1032489502 / 9781032489506

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  • Language: English

    Published by CRC Press, 2024

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  • Language: English

    Published by CRC Press, 2024

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  • Language: English

    Published by CRC Press, 2024

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    Condition: New. pages cm First edition Includes bibliographical references.

  • Language: English

    Published by CRC Press, 2024

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  • Language: English

    Published by CRC Press, 2024

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  • Language: English

    Published by CRC Press, 2024

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    Condition: New. In English.

  • Language: English

    Published by Taylor & Francis Ltd, 2024

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  • Language: English

    Published by CRC Press, 2024

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  • Language: English

    Published by CRC Press, 2024

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  • Language: English

    Published by CRC Press, 2024

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  • Language: English

    Published by CRC Press, 2024

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    Paperback. Condition: Brand New. 106 pages. 8.50x5.43x8.50 inches. In Stock.

  • Language: English

    Published by CRC Press 2023-04-13, 2023

    103248943X / 9781032489438

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  • Language: English

    Published by CRC Press, 2023

    103248943X / 9781032489438

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  • Language: English

    Published by Taylor & Francis Ltd, London, 2023

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    Hardcover. Condition: new. Hardcover. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.…

  • Language: English

    Published by CRC Press, 2024

    1032489502 / 9781032489506

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    Condition: New. Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in I.

  • Language: English

    Published by CRC Press, 2023

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    Language: English

    Published by CRC Press, 2024

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    Taschenbuch. Condition: Neu. 3D Integration of Resistive Switching Memory | Qing Luo | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2024 | CRC Press | EAN 9781032489506 | Verantwortliche Person für die EU: Taylor & Francis Verlag GmbH, Kaufingerstr. 24, 80331 München, gpsr[at]taylorandfrancis[dot]com | Anbieter: preigu. …

  • Language: English

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    Condition: New. 1st edition NO-PA16APR2015-KAP.

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  • Language: English

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    Paperback. Condition: New. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.…