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Integration Resistive Switching Memory (38 results)
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Condition: As New. Unread book in perfect condition.
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Condition: New.
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PAP. Condition: New. New Book. Shipped from UK. Established seller since 2000.
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3D Integration of Resistive Switching Memory
Language: English
Published by Taylor and Francis Ltd, GB, 2024
ISBN 10: 1032489502 ISBN 13: 9781032489506
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
Seller rating 5 out of 5 stars
Paperback. Condition: New. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
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3D Integration of Resistive Switching Memory
Seller: PBShop.store UK, Fairford, GLOS, United Kingdom
Seller rating 4 out of 5 stars
PAP. Condition: New. New Book. Shipped from UK. Established seller since 2000.
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Condition: New. pages cm.
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Condition: New. pages cm First edition Includes bibliographical references.
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3D Integration of Resistive Switching Memory (Frontiers in Semiconductor Technology)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 24.76
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Ships from United Kingdom to U.S.A.Quantity: Over 20 available
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3d Integration of Resistive Switching Memory
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
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3D Integration of Resistive Switching Memory
Language: English
Published by Taylor & Francis Ltd, 2024
ISBN 10: 1032489502 ISBN 13: 9781032489506
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Seller rating 5 out of 5 stars
Paperback / softback. Condition: New. New copy - Usually dispatched within 4 working days.
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paperback. Condition: New.
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3D Integration of Resistive Switching Memory (Frontiers in Semiconductor Technology)
Seller: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Ireland
Seller rating 5 out of 5 stars
Condition: New.
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Condition: New. pages cm.
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3d Integration of Resistive Switching Memory
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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Paperback. Condition: Brand New. 106 pages. 8.50x5.43x8.50 inches. In Stock.
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Condition: New.
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3D Integration of Resistive Switching Memory (Hardcover)
Language: English
Published by Taylor & Francis Ltd, London, 2023
ISBN 10: 103248943X ISBN 13: 9781032489438
Hardcover. Condition: new. Hardcover. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Condition: As New. Unread book in perfect condition.
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Condition: New. 1st edition NO-PA16APR2015-KAP.
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3D Integration of Resistive Switching Memory
Language: English
Published by Taylor & Francis Ltd, 2023
ISBN 10: 103248943X ISBN 13: 9781032489438
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Seller rating 5 out of 5 stars
Hardback. Condition: New. New copy - Usually dispatched within 4 working days.
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3d Integration of Resistive Switching Memory
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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3d Integration of Resistive Switching Memory
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: As New. Unread book in perfect condition.
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Taschenbuch. Condition: Neu. 3D Integration of Resistive Switching Memory | Qing Luo | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2024 | CRC Press | EAN 9781032489506 | Verantwortliche Person für die EU: Taylor & Francis Verlag GmbH, Kaufingerstr. 24, 80331 München, gpsr[at]taylorandfrancis[dot]com | Anbieter: preigu.
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3D Integration of Resistive Switching Memory (Frontiers in Semiconductor Technology)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 71.53
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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3D Integration of Resistive Switching Memory
Language: English
Published by Taylor and Francis Ltd, GB, 2024
ISBN 10: 1032489502 ISBN 13: 9781032489506
Paperback. Condition: New. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
-
3D Integration of Resistive Switching Memory (Hardcover)
Language: English
Published by Taylor & Francis Ltd, London, 2023
ISBN 10: 103248943X ISBN 13: 9781032489438
Hardcover. Condition: new. Hardcover. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general. This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
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Hardcover. Condition: Brand New. 128 pages. 8.50x5.44x0.43 inches. In Stock.
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Paperback. Condition: Brand New. 106 pages. 8.50x5.43x8.50 inches. In Stock. This item is printed on demand.
