Published by Institute of Technology, University of Minnesota N.D.
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Softcover. Condition: Very Good+. Dust Jacket Condition: No Dust Jacket. 12 page side-stapled softcover. No publication date; circa 1980's. Covers clean. Pages clean. ; TET19C; 11 x 8-1/2"; 12 pages.
Language: English
Published by World Scientific Publishing Company, 2004
ISBN 10: 9812389407 ISBN 13: 9789812389404
Seller: GreatBookPrices, Columbia, MD, U.S.A.
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Language: English
Published by World Scientific Publishing Co Pte Ltd, 2004
ISBN 10: 9812389407 ISBN 13: 9789812389404
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Language: English
Published by World Scientific Publishing Company, 2004
ISBN 10: 9812389407 ISBN 13: 9789812389404
Seller: GreatBookPrices, Columbia, MD, U.S.A.
Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Company, 2004
ISBN 10: 9812389407 ISBN 13: 9789812389404
Seller: California Books, Miami, FL, U.S.A.
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Language: English
Published by World Scientific Publishing Company, 2004
ISBN 10: 9812389407 ISBN 13: 9789812389404
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Language: English
Published by World Scientific Publishing Company, 2004
ISBN 10: 9812389407 ISBN 13: 9789812389404
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Language: English
Published by World Scientific Publishing Company, 2004
ISBN 10: 9812389407 ISBN 13: 9789812389404
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Language: English
Published by World Scientific Pub Co Inc, 2004
ISBN 10: 9812389407 ISBN 13: 9789812389404
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Paperback. Condition: Brand New. 338 pages. 9.75x6.50x0.75 inches. In Stock.
Seller: preigu, Osnabrück, Germany
Buch. Condition: Neu. RADIATION EFFECTS & SOFT ERRORS .(V34) | Schrimpf R D | Buch | Gebunden | Englisch | 2004 | World Scientific | EAN 9789812389404 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
Seller: AHA-BUCH GmbH, Einbeck, Germany
Buch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.