Pawlak Andreas (21 results)
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Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Published by TUDpress Verlag der Wissenschaften GmbH 2015-11, 2015
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Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Published by TUDpress Verlag der Wissenschaften GmbH, 2015
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Condition: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate… compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
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Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Published by Verlag Rudolf Winkelmann, Recklinghausen, 1985
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Hardcover. Condition: Gut. 15 x 22 cm illustrierter Original-Pappband ohne Schutzumschlag Einband hinten leicht beschädigt, Buchrücken leicht bestoßen, Vorsatz und Schnitt leicht fleckig, sonst GUTES EXEMPLAR---Zeichnungen von: Frank Casper und Anja Klinkner. Für Ihre Zufriedenheit versenden wir mit DHL und ausschließlich mit Tr…ackingcode für eine sichere Sendungsverfolgung! Weitere Angebote unter antiquariat-kastanienhof , 149 Seiten. nein.
1. Flucht übers Meer. Ostsee - Deutsches Schicksal 1945; 2. Der Schattenmann. Schauplatz Berlin. Tagebuchaufzeichnungen 1938 - 1948. Mit einem Nachwort von Jörg Drews; 3. Stalingrad; 4. Die Wehrmachtsuntersuchungsstelle. Unveröffentlichte Akten über alliierte Vöklerrechtsverletzungen im 2. Weltkrieg; 5. "Ich habe überlebt." Ein Häftling berichtet über Majdanek. Vorwort von Gerhard Mauz; 6. Verscheppt ans Ende der Welt. Schicksale deutscher Frauen in sowjetischen Arbeitslagern; 7. Bis alles in Scherben fällt. Wie wir die Nazizeit erlebten 1939 - 1945; 8. Neuengamme. Berichte, Erinnerungen, Dokumente; 9. Anus Mundi. Fünf Jahre in Auschwitz.
1. Bekker, Cajus; 2. Andreas-Friedrich, Ruth; 3. Beevor, Anthony; 4. Zayas, Alfred M. de; 5. Pawlak, Zacheusz; 6. Klier, Freya; 7. Engelmann, Bernt; 8. Bringmann, Fritz; 9. Kielar, Wieslaw.
Published by 1 Ffm: Ullstein (); 2 Ffm: Suhrkamp (2000); 3 Mchn: Goldmann (2001); 4 Mchn: Heyne (1981); 5 Hbg: Hoffmann und Campe (1979); 6 Bln: Ullstein (1996); 7 Mchn: Goldmann (1983); 8 Ffm: Röderberg (1981); 9 Ffm: Fischer (1979), 1981
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Alle Okrt., 1. - 7. Kl8°, 8., 9. 8°. 281, 586, 543, 477, 271, 351, 412, 164, 416 S. (Z.T.mit leichten Altersspuren, durchweg gute bis gut brauchbare Exemplare, z. T. neuwertig). Abgabe der 9 Titel nur zusammen. Als kostenlose Zugabe: Albert Speer. Erinnerungen Ffm: Ullstein (1969). Okrt., 608 S., Kl8°. (Leichte Altersspuren, gut…es Exemplar) 1 2500 gr. 0.0.
Language: English
Published by TUDpress Verlag der Wissenschaften GmbH, 2015
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PAP. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Condition: New. Print on Demand pp. 234.
Language: English
Published by Tudpress Verlag Der Wissenschaften Gmbh Nov 2015, 2015
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the s…ystems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented. 232 pp. Englisch.
Language: English
Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Condition: New. Print on Demand pp. 234.
Language: English
Published by Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Condition: New. PRINT ON DEMAND pp. 234.
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Published by TUDpress Verlag der Wissenschaften GmbH, 2015
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and comp…lexity of the systems, accurate compact .
Language: English
Published by Tudpress Verlag Der Wissenschaften Gmbh, Tudpress Verlag Der Wissenschaften Gmbh Nov 2015, 2015
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the syste…ms, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.TUDpress, Hüblerstraße 26, 01309 Dresden 232 pp. Englisch.
Language: English
Published by Tudpress Verlag Der Wissenschaften Gmbh, Tudpress Verlag Der Wissenschaften Gmbh, 2015
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the system…s, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
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Published by TUDpress Verlag der Wissenschaften GmbH, 2015
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Taschenbuch. Condition: Neu. Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors | Andreas Pawlak | Taschenbuch | 232 S. | Englisch | 2015 | TUDpress Verlag der Wissenschaften GmbH | EAN 9783959080286 | Verantwortliche Person für die EU: TUDpress Verlag der Wissenschaften Dresden GmbH, Bergstr. 70, 01069 Dr…esden, mail[at]tudpress[dot]de | Anbieter: preigu Print on Demand.
