Noritaka Usami (41 results)

Condition: New. In English.

Condition: New.

Condition: New.

Condition: New.

Condition: New. In English.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book, a continuation of the series 'Advances in Materials Research,' is intended to provide the general basis of the science and technology of crystal growth of silicon for solar cells. In the face of the destruction of the global environment,the degradationofworld-widenaturalresourcesandtheexha- tion of energy sources in the twenty- rst century, we all have a sincere desire for a better/safer world in the future. In these days, we strongly believe that it is important for us to rapidly developanewenvironment-friendlycleanenergyconversionsystemusingsolar energyastheultimatenaturalenergysource. Forinstance,mostofournatural resources and energy sources will be exhausted within the next 100 years. Speci cally, the consumption of oil, natural gas, and uranium is a serious problem. Solar energy is the only ultimate natural energy source. Although 30% of total solar energy is re ected at the earth's surface, 70% of total solar energy can be available for us to utilize. The available solar energy amounts to severalthousand times larger than the world's energy consumption in 2000 of about 9,000 Mtoe (M ton oil equivalent). To manage 10% of the world's energy consumption at 2050 by solar energy, we must manufacture 40 GW solar cells per year continuously for 40 years. The required silicon feedstock is about 400,000 ton per year. We believe that this is an attainable target, since it can be realized by increasing the world production of silicon feedstock by 12times asmuchasthe presentproductionat2005.…

Taschenbuch. Condition: Neu. Crystal Growth of Silicon for Solar Cells | Kazuo Nakajima (u. a.) | Taschenbuch | Advances in Materials Research | xiv | Englisch | 2012 | Springer | EAN 9783642260759 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Condition: New. pp. 272 Index.

Condition: New. pp. 272 Index.

Paperback. Condition: Brand New. 2009 edition. 269 pages. 9.25x6.10x0.64 inches. In Stock.

Hardcover. Condition: Brand New. 1st edition. 255 pages. 9.40x6.40x0.90 inches. In Stock.

Condition: New.

Condition: New.

Condition: As New. Unread book in perfect condition.

Condition: As New. Unread book in perfect condition.

Taschenbuch. Condition: Neu. Silicon-Germanium (Sige) Nanostructures | Production, Properties and Applications in Electronics | Yasuhiro Shiraki (u. a.) | Taschenbuch | Englisch | 2011 | Elsevier Inc | EAN 9780081017395 | Verantwortliche Person für die EU: Kolibri 360 GmbH, Ettore-Bugatti-Str. 6-14, 51149 Köln, produktsicherheit[at]kolibri360[dot]de | Anbieter: preigu. …

Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Hardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condition: As New. Unread book in perfect condition.

Condition: New. In English.

Condition: As New. Unread book in perfect condition.

Paperback. Condition: New. Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.…

Paperback. Condition: New. Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.…

Condition: New. Reviews the materials science of nanostructures and their properties and applications in different electronic devicesAssesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloysExp.

[978-3-642-02043-8] 2009. (Hardcover) Near fine, no dust jacket. 255pp. Illustrations, tables, formulas, references, index. Starting to delaminate at the top and bottom of the spine. Publisher series: Advances in Materials Research 14. (Science, Materials Science, Solar Cells).

Condition: new. Questo è un articolo print on demand.

Condition: new. Questo è un articolo print on demand.

Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book, a continuation of the series 'Advances in Materials Research,' is intended to provide the general basis of the science and technology of crystal growth of silicon for solar cells. In the face of the destruction of the global environment,the degradationofworld-widenaturalresourcesandtheexha- tion of energy sources in the twenty- rst century, we all have a sincere desire for a better/safer world in the future. In these days, we strongly believe that it is important for us to rapidly developanewenvironment-friendlycleanenergyconversionsystemusingsolar energyastheultimatenaturalenergysource. Forinstance,mostofournatural resources and energy sources will be exhausted within the next 100 years. Speci cally, the consumption of oil, natural gas, and uranium is a serious problem. Solar energy is the only ultimate natural energy source. Although 30% of total solar energy is re ected at the earth's surface, 70% of total solar energy can be available for us to utilize. The available solar energy amounts to severalthousand times larger than the world's energy consumption in 2000 of about 9,000 Mtoe (M ton oil equivalent). To manage 10% of the world's energy consumption at 2050 by solar energy, we must manufacture 40 GW solar cells per year continuously for 40 years. The required silicon feedstock is about 400,000 ton per year. We believe that this is an attainable target, since it can be realized by increasing the world production of silicon feedstock by 12times asmuchasthe presentproductionat2005. 272 pp. Englisch.…

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book, a continuation of the series 'Advances in Materials Research,' is intended to provide the general basis of the science and technology of crystal growth of silicon for solar cells. In the face of the destruction of the global environment,the degradationofworld-widenaturalresourcesandtheexha- tion of energy sources in the twenty- rst century, we all have a sincere desire for a better/safer world in the future. In these days, we strongly believe that it is important for us to rapidly developanewenvironment-friendlycleanenergyconversionsystemusingsolar energyastheultimatenaturalenergysource. Forinstance,mostofournatural resources and energy sources will be exhausted within the next 100 years. Speci cally, the consumption of oil, natural gas, and uranium is a serious problem. Solar energy is the only ultimate natural energy source. Although 30% of total solar energy is re ected at the earth's surface, 70% of total solar energy can be available for us to utilize. The available solar energy amounts to severalthousand times larger than the world's energy consumption in 2000 of about 9,000 Mtoe (M ton oil equivalent). To manage 10% of the world's energy consumption at 2050 by solar energy, we must manufacture 40 GW solar cells per year continuously for 40 years. The required silicon feedstock is about 400,000 ton per year. We believe that this is an attainable target, since it can be realized by increasing the world production of silicon feedstock by 12times asmuchasthe presentproductionat2005. 272 pp. Englisch.…

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Covers the technology and basic materials science for Si bulk thin-film crystal growthA valuable reference work for engineers producing solar cell material and for materials scientistsOffers many insights into advanced Si growth technologie.…