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Taschenbuch. Condition: Neu. Neuware - For 66 years, Raj and Sri shared a journey filled with ups and downs. Despite facing challenges, their love for family kept them going strong. Their story is like a woven fabric of happy moments and tough times. A love story that was not accepted by society in the 20th century rural town in South India. A story of hard work to provide a better life for the family. An unwearing support for each other even in the lowest points in their lives.
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Published by Taylor & Francis Ltd, 2026
ISBN 10: 1041062672 ISBN 13: 9781041062677
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Published by Taylor & Francis Ltd, London, 2026
ISBN 10: 1041062672 ISBN 13: 9781041062677
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Hardcover. Condition: new. Hardcover. This book comprehensively:Covers material for nanowires, device models, and applications for circuit design based on nanowire field-effect transistorsExplains a wide spectrum for designing robust multi-gate nanowire devices and low-power circuitsHighlights the conventional and novel nanomaterials, devices, and circuits, leakage current mitigation techniques, and important tradeoffs along with exhaustive analysisIncludes nanowire device structures and modeling along with MATLAB codesOffers an in-depth insight into the temporal degradation awareness and interconnects delay, which provides inside exposure to the impact of reductions in speed and consumption of more powerThe text is primarily written for senior undergraduates, graduate students, and academic researchers in electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology. The book begins by discussing nanomaterials for nanowire transistors, two-dimensional (2D) materials in designing nanowires, notably in field-effect transistor (FET) electronics. It further discusses nanowire transistor performance limits and high-speed integrated nanowire circuitry. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Published by Taylor & Francis Ltd, London, 2026
ISBN 10: 1041062672 ISBN 13: 9781041062677
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Hardcover. Condition: new. Hardcover. This book comprehensively:Covers material for nanowires, device models, and applications for circuit design based on nanowire field-effect transistorsExplains a wide spectrum for designing robust multi-gate nanowire devices and low-power circuitsHighlights the conventional and novel nanomaterials, devices, and circuits, leakage current mitigation techniques, and important tradeoffs along with exhaustive analysisIncludes nanowire device structures and modeling along with MATLAB codesOffers an in-depth insight into the temporal degradation awareness and interconnects delay, which provides inside exposure to the impact of reductions in speed and consumption of more powerThe text is primarily written for senior undergraduates, graduate students, and academic researchers in electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology. The book begins by discussing nanomaterials for nanowire transistors, two-dimensional (2D) materials in designing nanowires, notably in field-effect transistor (FET) electronics. It further discusses nanowire transistor performance limits and high-speed integrated nanowire circuitry. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
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Buch. Condition: Neu. Nanowire | Materials, Devices, Circuits, and Applications | Shailendra Singh (u. a.) | Buch | Einband - fest (Hardcover) | Englisch | 2026 | CRC Press | EAN 9781041062677 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
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Published by Taylor & Francis Ltd, London, 2026
ISBN 10: 1041062672 ISBN 13: 9781041062677
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Hardcover. Condition: new. Hardcover. This book comprehensively:Covers material for nanowires, device models, and applications for circuit design based on nanowire field-effect transistorsExplains a wide spectrum for designing robust multi-gate nanowire devices and low-power circuitsHighlights the conventional and novel nanomaterials, devices, and circuits, leakage current mitigation techniques, and important tradeoffs along with exhaustive analysisIncludes nanowire device structures and modeling along with MATLAB codesOffers an in-depth insight into the temporal degradation awareness and interconnects delay, which provides inside exposure to the impact of reductions in speed and consumption of more powerThe text is primarily written for senior undergraduates, graduate students, and academic researchers in electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology. The book begins by discussing nanomaterials for nanowire transistors, two-dimensional (2D) materials in designing nanowires, notably in field-effect transistor (FET) electronics. It further discusses nanowire transistor performance limits and high-speed integrated nanowire circuitry. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
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Buch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The book begins by discussing nanomaterials for nanowire transistors, two-dimensional (2D) materials in designing nanowires, notably in field-effect transistor (FET) electronics. It further discusses nanowire transistor performance limits and high-speed integrated nanowire circuitry.