Impellizzeri Giuliana (18 results)

Condition: New. pp. 120.

Taschenbuch. Condition: Neu. Fluorine enriched silicon: properties and advantages | Interaction between point defects, fluorine and boron atoms in crystalline silicon | Giuliana Impellizzeri | Taschenbuch | 120 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783843374088 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.…

Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Taschenbuch. Condition: Neu. Emerging Materials for Energy Conversion and Storage | Kuan Yew Cheong (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2018 | Elsevier Inc | EAN 9780128137949 | Verantwortliche Person für die EU: Kolibri 360 GmbH, Ettore-Bugatti-Str. 6-14, 51149 Köln, produktsicherheit[at]kolibri360[dot]de | Anbieter: preigu. …

Condition: New.

Condition: New.

Condition: As New. Unread book in perfect condition.

Condition: New. In English.

Condition: As New. Unread book in perfect condition.

Condition: New. Explores the fundamentals, challenges and prospects for the application of emerging materials in the development of energy conversion and storage devices Presents a discussion of solar cell and photovoltaic, fuel cell, battery electrode, s.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Si-based microelectronic community is experiencing a sort of revolution, in order to meet the scaling rate demanded by high-tech industries. Shallow p-type junctions with high active dopant concentrations are needed. The F capability in helping the B confinement in Si is widely recognized, even if there is not a general consensus on the physical mechanisms acting. Different mechanisms have been proposed: a chemical bonding between F and B; or a F interaction with point defects, through the formation of F-I (interstitial) or F-V (vacancy) complexes. This thesis investigates the F behaviour in pre-amorphized Si, opening a new route towards the F profile engineering. F is shown to strongly modify Is and Vs population, inducing an Is undersaturation or a Vs supersaturation. Such effect is transient, because strictly correlated to the transient presence of F in the Si samples. Our results allow a point defect engineering by means of F, ruling out the F-B chemical bonding as the responsible for B diffusion reduction by F, and suggesting the F-V bonding as the key mechanism governing the F behaviour in pre-amorphized Si and its capability in controlling the point defect population. 120 pp. Englisch.…

Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Si-based microelectronic community is experiencing a sort of revolution, in order to meet the scaling rate demanded by high-tech industries. Shallow p-type junctions with high active dopant concentrations are needed. The F capability in helping the B confinement in Si is widely recognized, even if there is not a general consensus on the physical mechanisms acting. Different mechanisms have been proposed: a chemical bonding between F and B; or a F interaction with point defects, through the formation of F-I (interstitial) or F-V (vacancy) complexes. This thesis investigates the F behaviour in pre-amorphized Si, opening a new route towards the F profile engineering. F is shown to strongly modify Is and Vs population, inducing an Is undersaturation or a Vs supersaturation. Such effect is transient, because strictly correlated to the transient presence of F in the Si samples. Our results allow a point defect engineering by means of F, ruling out the F-B chemical bonding as the responsible for B diffusion reduction by F, and suggesting the F-V bonding as the key mechanism governing the F behaviour in pre-amorphized Si and its capability in controlling the point defect population.…

Condition: New. Print on Demand pp. 120 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Kartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Impellizzeri GiulianaPh.D. Degree in Physics (cum laude) from the University of Catania, Italy. Since 2004 she works as researcher at the MATIS-IMM centre of the CNR on group IV advanced materials for microelectronics. She is author .…

Condition: New. PRINT ON DEMAND pp. 120.

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Si-based microelectronic community is experiencing a sort of revolution, in order to meet the scaling rate demanded by high-tech industries. Shallow p-type junctions with high active dopant concentrations are needed. The F capability in helping the B confinement in Si is widely recognized, even if there is not a general consensus on the physical mechanisms acting. Different mechanisms have been proposed: a chemical bonding between F and B; or a F interaction with point defects, through the formation of F-I (interstitial) or F-V (vacancy) complexes. This thesis investigates the F behaviour in pre-amorphized Si, opening a new route towards the F profile engineering. F is shown to strongly modify Is and Vs population, inducing an Is undersaturation or a Vs supersaturation. Such effect is transient, because strictly correlated to the transient presence of F in the Si samples. Our results allow a point defect engineering by means of F, ruling out the F-B chemical bonding as the responsible for B diffusion reduction by F, and suggesting the F-V bonding as the key mechanism governing the F behaviour in pre-amorphized Si and its capability in controlling the point defect population.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 120 pp. Englisch.…

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Emerging Materials for Energy Conversion and Storage presents the state-of-art of emerging materials for energy conversion technologies (solar cells and fuel cells) and energy storage technologies (batteries, supercapacitors and hydrogen storage). The book is organized into five primary sections, each with three chapters authored by worldwide experts in the fields of materials science, physics, chemistry and engineering. It covers the fundamentals, functionalities, challenges and prospects of different classes of emerging materials, such as wide bandgap semiconductors, oxides, carbon-based nanostructures, advanced ceramics, chalcogenide nanostructures, and flexible organic electronics nanomaterials. The book is an important reference for students and researchers (from academics, but also industry) interested in understanding the properties of emerging materials. Englisch.…

Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Emerging Materials for Energy Conversion and Storage presents the state-of-art of emerging materials for energy conversion technologies (solar cells and fuel cells) and energy storage technologies (batteries, supercapacitors and hydrogen storage). The book is organized into five primary sections, each with three chapters authored by worldwide experts in the fields of materials science, physics, chemistry and engineering. It covers the fundamentals, functionalities, challenges and prospects of different classes of emerging materials, such as wide bandgap semiconductors, oxides, carbon-based nanostructures, advanced ceramics, chalcogenide nanostructures, and flexible organic electronics nanomaterials. The book is an important reference for students and researchers (from academics, but also industry) interested in understanding the properties of emerging materials.…