Shrijit Mukherjee (35 results)
- Softcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: New
£ 52.38
£ 1.94 shippingShips within U.S.A.Quantity: Over 20 available
Condition: New.
- Softcover
Seller: California Books, Miami, FL, U.S.A.California Books
Contact seller4-star sellerCondition: New
£ 54.38
Free ShippingShips within U.S.A.Quantity: Over 20 available
Condition: New.
- Softcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: Used - As new
£ 54.51
£ 1.94 shippingShips within U.S.A.Quantity: Over 20 available
Condition: As New. Unread book in perfect condition.
- Softcover
Seller: Rarewaves USA, HEBRON, KY, U.S.A.Rarewaves USA
Contact seller5-star sellerCondition: New
£ 61.20
Free ShippingShips within U.S.A.Quantity: Over 20 available
Paperback. Condition: New.
- Softcover
Seller: Rarewaves.com USA, London, LONDO, United KingdomRarewaves.com USA
Contact seller5-star sellerCondition: New
£ 63.55
Free ShippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Paperback. Condition: New.
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
Contact seller5-star sellerCondition: New
£ 52.22
£ 11.98 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New. In.
Language: English
Published by Dissertation Discovery Company 2019-05-31, 2019
- Softcover
Seller: Chiron Media, Wallingford, United KingdomChiron Media
Contact seller5-star sellerCondition: New
£ 49.10
£ 15.49 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Paperback. Condition: New.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: New
£ 51.58
£ 15.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: Used - As new
£ 57.42
£ 15.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: As New. Unread book in perfect condition.
- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: New
£ 78.81
£ 1.94 shippingShips within U.S.A.Quantity: Over 20 available
Condition: New.
- Hardcover
Seller: California Books, Miami, FL, U.S.A.California Books
Contact seller4-star sellerCondition: New
£ 80.81
Free ShippingShips within U.S.A.Quantity: Over 20 available
Condition: New.
- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
Contact seller5-star sellerCondition: Used - As new
£ 79.36
£ 1.94 shippingShips within U.S.A.Quantity: Over 20 available
Condition: As New. Unread book in perfect condition.
- Hardcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
Contact seller5-star sellerCondition: New
£ 76.41
£ 11.98 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New. In.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: New
£ 76.40
£ 15.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: Used - As new
£ 83.05
£ 15.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: As New. Unread book in perfect condition.
- Softcover
Seller: Rarewaves USA United, HEBRON, KY, U.S.A.Rarewaves USA United
Contact seller5-star sellerCondition: New
£ 62.11
£ 36.66 shippingShips within U.S.A.Quantity: Over 20 available
Paperback. Condition: New.
- Softcover
Seller: Buchpark, Trebbin, GermanyBuchpark
Contact seller5-star sellerCondition: Used
£ 22.01
£ 89.84 shippingShips from Germany to U.S.A.Quantity: 2 available
Condition: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | Abstract: GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in several commercial and military applications. However, long term reliability continu…es to affect large scale integration of such devices, specifically the potential of AlGaN/GaN High Electron Mobility Transistors (HEMTs), due to the indefinite nature of defects in the structure and mechanisms of performance degradation relevant to such defects. Recent efforts have begun to concentrate more on the bulk properties of the GaN buffer on which the heterostructure is grown, and how defects distributed in the buffer can affect the performance under various operating schemes. This dissertation discusses numerical simulator based investigation of the numerous possibilities by which such point defects can affect electrical behavior. For HEMTs designed for satellite communication systems, proton irradiation results indicate changes in the device parasitics resulting in degradation of RF parameters. Assumption of such radiation damage introducing fast traps indicate severe degradation far exceeding experimental observation. For power switching applications, the necessity of accurately capturing as-grown defects was realized when modeling current relaxation during bias switching. Ability to introduce multiple trap levels in the material bulk aided in achieving simulation results replicating experimental results more accurately than published previously. Impact of factors associated with such traps, either associated with discrete energy levels or band-like distribution in energy, on the nature of current relaxation characterized by its derivative has been presented. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors" by Shrijit Mukherjee, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
Contact seller5-star sellerCondition: Used - Fine
£ 25.75
£ 89.84 shippingShips from Germany to U.S.A.Quantity: 2 available
Condition: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Abstract: GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in several commercial and military applications. However, long term reliability continues to af…fect large scale integration of such devices, specifically the potential of AlGaN/GaN High Electron Mobility Transistors (HEMTs), due to the indefinite nature of defects in the structure and mechanisms of performance degradation relevant to such defects. Recent efforts have begun to concentrate more on the bulk properties of the GaN buffer on which the heterostructure is grown, and how defects distributed in the buffer can affect the performance under various operating schemes. This dissertation discusses numerical simulator based investigation of the numerous possibilities by which such point defects can affect electrical behavior. For HEMTs designed for satellite communication systems, proton irradiation results indicate changes in the device parasitics resulting in degradation of RF parameters. Assumption of such radiation damage introducing fast traps indicate severe degradation far exceeding experimental observation. For power switching applications, the necessity of accurately capturing as-grown defects was realized when modeling current relaxation during bias switching. Ability to introduce multiple trap levels in the material bulk aided in achieving simulation results replicating experimental results more accurately than published previously. Impact of factors associated with such traps, either associated with discrete energy levels or band-like distribution in energy, on the nature of current relaxation characterized by its derivative has been presented. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors" by Shrijit Mukherjee, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
Contact seller5-star sellerCondition: Used
£ 26.57
£ 89.84 shippingShips from Germany to U.S.A.Quantity: 1 available
Condition: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | Abstract: GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in several commercial and military applications. However, long term reliability continu…es to affect large scale integration of such devices, specifically the potential of AlGaN/GaN High Electron Mobility Transistors (HEMTs), due to the indefinite nature of defects in the structure and mechanisms of performance degradation relevant to such defects. Recent efforts have begun to concentrate more on the bulk properties of the GaN buffer on which the heterostructure is grown, and how defects distributed in the buffer can affect the performance under various operating schemes. This dissertation discusses numerical simulator based investigation of the numerous possibilities by which such point defects can affect electrical behavior. For HEMTs designed for satellite communication systems, proton irradiation results indicate changes in the device parasitics resulting in degradation of RF parameters. Assumption of such radiation damage introducing fast traps indicate severe degradation far exceeding experimental observation. For power switching applications, the necessity of accurately capturing as-grown defects was realized when modeling current relaxation during bias switching. Ability to introduce multiple trap levels in the material bulk aided in achieving simulation results replicating experimental results more accurately than published previously. Impact of factors associated with such traps, either associated with discrete energy levels or band-like distribution in energy, on the nature of current relaxation characterized by its derivative has been presented. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors" by Shrijit Mukherjee, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
- Softcover
Seller: Rarewaves.com UK, London, United KingdomRarewaves.com UK
Contact seller5-star sellerCondition: New
£ 57.98
£ 65.00 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Paperback. Condition: New.
- Softcover
Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
Contact seller4-star sellerCondition: New
£ 120.00
£ 25.00 shippingShips from United Kingdom to U.S.A.Quantity: 1 available
paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
- Hardcover
Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
Contact seller4-star sellerCondition: New
£ 160.00
£ 25.00 shippingShips from United Kingdom to U.S.A.Quantity: 1 available
Hardcover. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
- Softcover
- Print on Demand
Seller: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
Contact seller5-star sellerCondition: New
£ 56.40
Free ShippingShips within U.S.A.Quantity: Over 20 available
PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
- Softcover
- Print on Demand
Seller: PBShop.store UK, Fairford, GLOS, United KingdomPBShop.store UK
Contact seller5-star sellerCondition: New
£ 52.83
£ 4.16 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
PAP. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
- Softcover
- Print on Demand
Seller: THE SAINT BOOKSTORE, Southport, United KingdomTHE SAINT BOOKSTORE
Contact seller5-star sellerCondition: New
£ 60.73
£ 13.24 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Paperback / softback. Condition: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
- Hardcover
- Print on Demand
Seller: PBShop.store UK, Fairford, GLOS, United KingdomPBShop.store UK
Contact seller5-star sellerCondition: New
£ 73.30
£ 5.02 shippingShips from United Kingdom to U.S.A.Quantity: 15 available
HRD. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
- Softcover
- Print on Demand
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
Contact seller4-star sellerCondition: New
£ 76.22
£ 6.50 shippingShips from United Kingdom to U.S.A.Quantity: 4 available
Condition: New. Print on Demand pp. 130.
- Softcover
- Print on Demand
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
Contact seller4-star sellerCondition: New
£ 81.14
£ 2.93 shippingShips within U.S.A.Quantity: 4 available
Condition: New. Print on Demand pp. 130.
- Softcover
- Print on Demand
Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
Contact seller4-star sellerCondition: New
£ 81.26
£ 8.51 shippingShips from Germany to U.S.A.Quantity: 4 available
Condition: New. PRINT ON DEMAND pp. 130.
More images- Softcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
£ 39.96
£ 59.89 shippingShips from Germany to U.S.A.Quantity: 5 available
Taschenbuch. Condition: Neu. Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors | Shrijit Mukherjee | Taschenbuch | Kartoniert / Broschiert | Englisch | 2019 | Dissertation Discovery Company | EAN 9780530005881 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at…]libri[dot]de | Anbieter: preigu Print on Demand.
