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Physics of Semiconductor Devices
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 66.16
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Paperback. Condition: New.
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Condition: New. pp. 672 Softcover reprint of the original 1st ed. 2015 edition NO-PA16APR2015-KAP.
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Simulation of Semiconductor Devices and Processes Volume 3 - Proceedings of the Third International Conference Held at the University of Bologna, Italy, September 1988
Published by Bologna: Alma Mater Studiorum, 1988, Bologna, 1988
First Edition
Hard Cover. Condition: Very Good. Dust Jacket Condition: Very Good. First Edition. Hard Cover. Very Good/Very Good. First Edition. 8vo - over 7¾" - 9¾" tall. 662pp, generally fine copy. Size: 8vo - over 7¾" - 9¾" tall.
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Condition: New. pp. 672.
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Condition: New.
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hardcover. Condition: Sehr gut. 968 Seiten; 9783319631530.2 Gewicht in Gramm: 500.
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Physics of Semiconductor Devices
Language: English
Published by Springer International Publishing, 2018
ISBN 10: 3319874861 ISBN 13: 9783319874869
Condition: New.
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Paperback. Condition: Brand New. reprint edition. 672 pages. 9.25x6.10x1.97 inches. In Stock.
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Taschenbuch. Condition: Neu. Physics of Semiconductor Devices | Massimo Rudan | Taschenbuch | xxiii | Englisch | 2016 | Springer | EAN 9781493946990 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Physics of Semiconductor Devices
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 117.36
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Physics of Semiconductor Devices
Language: English
Published by Springer US, Springer New York, 2016
ISBN 10: 1493946994 ISBN 13: 9781493946990
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters aredevoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
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Condition: New. pp. 920.
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Paperback. Condition: Like New. Like New. book.
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Hardcover. Condition: New. New. book.
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Taschenbuch. Condition: Neu. Physics of Semiconductor Devices | Massimo Rudan | Taschenbuch | xlviii | Englisch | 2018 | Springer | EAN 9783319874869 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Physics of Semiconductor Devices
Language: English
Published by Springer International Publishing, 2017
ISBN 10: 3319631535 ISBN 13: 9783319631530
Condition: New.
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Physics of Semiconductor Devices
Language: English
Published by Springer International Publishing, Springer Aug 2018, 2018
ISBN 10: 3319874861 ISBN 13: 9783319874869
Taschenbuch. Condition: Neu. Neuware - This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.
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paperback. Condition: New. New. book.
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Condition: New. pp. 866.
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Physics of Semiconductor Devices
Language: English
Published by Springer International Publishing, Springer International Publishing, 2017
ISBN 10: 3319631535 ISBN 13: 9783319631530
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.
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Hardcover. Condition: Brand New. 2nd edition. 968 pages. 9.25x6.10x2.44 inches. In Stock.
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Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Condition: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.
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Condition: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.
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Condition: New. 1st ed. 2023 edition 092 NO-PA16APR2015-KAP.
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