Queisser Hans Joachim (46 results)

siehe Artikelbeschreibung. Condition: siehe Artikelbeschreibung. ; geb. A.; OKart; OU; 350 S.; Zustand: Einband und OU gut; Schnitt Oberkante etwas fleckig; S. 45 - 55 dünne Bleistift - Striche; sonst gut und unbenutzt; kein Besitzvermerk.

brosch?rt. Condition: Gut. Obr.,63s., in gutem Zustand. [SAP136]. [SAP54]. (2) Deu 400g.

Condition: New.

63 S., broschiert ; Reihe: Carl-Friedrich-von-Siemens-Stiftung: Themen, Band 21 ; Vortrag, gehalten an dem Mentorenabend der Carl-Friedrich-von-Siemens-Stiftung in München-Nymphenburg am 4. November 1974 ; mit 6 Illustrationen und graphische Darstellungen ; 21 cm ; sehr guter Zustand, keine Gebrauchsspuren, keine Mängel .…

Hardcover. Condition: Good. No Jacket. 310 p; 179 Fig, Library-Stamp at Title-Page, else good.

Hardcover. Condition: Good. No Jacket. 426 p; 270 Fig; Library-Stamp on Title-page, else good.

Hardcover. Condition: Good. No Jacket. 396 p; 199 Fig, Library-Stamp on Title-page, else good.

Condition: New. pp. 138 Index.

Paperback. Condition: Brand New. reprint edition. 130 pages. 9.25x6.10x0.32 inches. In Stock.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every day experience, this choice being dictated merely by their greater knowl edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.…

Hardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condition: As New. Unread book in perfect condition.

Condition: gut. Physical Chemistry of, in and on Silicon In deutscher Sprache. pages.

Condition: New.

Condition: New.

Condition: New.

Condition: New.

Gebunden. Condition: New.

Condition: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.…

Condition: New.

Buch. Condition: Neu. Point Defects in Semiconductors and Insulators | Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions | Johann-Martin Spaeth (u. a.) | Buch | Springer Series in Materials Science | xi | Englisch | 2003 | Springer | EAN 9783540426950 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.…

Taschenbuch. Condition: Neu. Point Defects in Semiconductors and Insulators | Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions | Johann-Martin Spaeth (u. a.) | Taschenbuch | Springer Series in Materials Science | xi | Englisch | 2012 | Springer | EAN 9783642627224 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.…

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The precedent book with the title 'Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy' ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for 'fundamental' studies in solid state physics. Therefore a more 'pedestrian' access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from 'forbidden' transitions as well as on spatial correlations between defects in the so-called 'cross relaxation spectroscopy'. High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.…

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The precedent book with the title 'Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy' ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for 'fundamental' studies in solid state physics. Therefore a more 'pedestrian' access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from 'forbidden' transitions as well as on spatial correlations between defects in the so-called 'cross relaxation spectroscopy'. High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.…

Condition: New. pp. 508.

Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condition: As New. Unread book in perfect condition.

Condition: As New. Unread book in perfect condition.

Hardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.