Musalikunta Chandra Sekhar (6 results)
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
Contact seller5-star sellerCondition: New
£ 105.26
£ 10.00 shippingShips from United Kingdom to U.S.A.Quantity: 1 available
Paperback. Condition: Brand New. 180 pages. 8.66x5.91x0.41 inches. In Stock.
- Softcover
Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
Contact seller4-star sellerCondition: New
£ 173.00
£ 25.00 shippingShips from United Kingdom to U.S.A.Quantity: 1 available
paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Language: English
Published by LAP LAMBERT Academic Publishing Mai 2016, 2016
- Softcover
- Print on Demand
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
Contact seller5-star sellerCondition: New
£ 61.72
£ 19.17 shippingShips from Germany to U.S.A.Quantity: 2 available
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant. 180 pp. Englisch.…
- Softcover
- Print on Demand
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
£ 61.72
£ 29.17 shippingShips from Germany to U.S.A.Quantity: 1 available
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.…
- Softcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
Contact seller5-star sellerCondition: New
£ 49.88
£ 40.83 shippingShips from Germany to U.S.A.Quantity: Over 20 available
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Musalikunta Chandra SekharHe received the B.Sc. degree with First Class from Sri Venkateswara University, Tirupati, India in 2001 and the M.S. and Ph.D. degrees from the Sri Venkateswara University, Tirupati, in 2005 and 2012, respec.…
Language: English
Published by LAP LAMBERT Academic Publishing Mai 2016, 2016
- Softcover
- Print on Demand
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
Contact seller5-star sellerCondition: New
£ 61.72
£ 50.00 shippingShips from Germany to U.S.A.Quantity: 1 available
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 180 pp. Englisch.…
