Items related to Investigations on Magnetron Sputtered Titanium based...
Investigations on Magnetron Sputtered Titanium based Oxide Films: For Microelectronic Devices - Softcover
Synopsis
The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.
"synopsis" may belong to another edition of this title.
About the Author
He received the B.Sc. degree with First Class from Sri Venkateswara University, Tirupati, India in 2001 and the M.S. and Ph.D. degrees from the Sri Venkateswara University, Tirupati, in 2005 and 2012, respectively. In 2012, Dr. M. Chandra Sekhar joined the Department of Physics, Madanapalle Institute of Technology & Science, Madanapalle, India.
"About this title" may belong to another edition of this title.
Search results for Investigations on Magnetron Sputtered Titanium based...
Seller Image
Investigations on Magnetron Sputtered Titanium based Oxide Films
Published by
LAP LAMBERT Academic Publishing Mai 2016, 2016
ISBN 10: 3659874817
ISBN 13: 9783659874819
New
Taschenbuch
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant. 180 pp. Englisch. Seller Inventory # 9783659874819
Seller Image
Investigations on Magnetron Sputtered Titanium based Oxide Films
Published by
LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659874817
ISBN 13: 9783659874819
New
Softcover
Seller: moluna, Greven, Germany
Seller rating 5 out of 5 stars
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Musalikunta Chandra SekharHe received the B.Sc. degree with First Class from Sri Venkateswara University, Tirupati, India in 2001 and the M.S. and Ph.D. degrees from the Sri Venkateswara University, Tirupati, in 2005 and 2012, respec. Seller Inventory # 159146790
Buy New
£ 51.27
£ 41.96 shipping
Ships from Germany to U.S.A.
Ships from Germany to U.S.A.
Quantity: Over 20 available
Seller Image
Investigations on Magnetron Sputtered Titanium based Oxide Films | For Microelectronic Devices
Published by
LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659874817
ISBN 13: 9783659874819
New
Taschenbuch
Seller: preigu, Osnabrück, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Investigations on Magnetron Sputtered Titanium based Oxide Films | For Microelectronic Devices | Chandra Sekhar Musalikunta (u. a.) | Taschenbuch | 180 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659874819 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Seller Inventory # 103690882
Seller Image
Investigations on Magnetron Sputtered Titanium based Oxide Films
Published by
LAP LAMBERT Academic Publishing Mai 2016, 2016
ISBN 10: 3659874817
ISBN 13: 9783659874819
New
Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 180 pp. Englisch. Seller Inventory # 9783659874819
Seller Image
Investigations on Magnetron Sputtered Titanium based Oxide Films : For Microelectronic Devices
Published by
LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659874817
ISBN 13: 9783659874819
New
Taschenbuch
Seller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant. Seller Inventory # 9783659874819
Stock Image
Investigations on Magnetron Sputtered Titanium based Oxide Films: For Microelectronic Devices
Published by
LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659874817
ISBN 13: 9783659874819
New
paperback
Seller: Mispah books, Redhill, SURRE, United Kingdom
Seller rating 4 out of 5 stars
paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book. Seller Inventory # ERICA82936598748176