M D Pashley (23 results)
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- Softcover
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- Hardcover
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- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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- Hardcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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£ 244.08
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Condition: New. pp. 272 Index.
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condition: New. pp. 272 Index.
Language: English
Published by Springer Netherlands, Springer Netherlands 1993
- Hardcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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£ 198.34
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different asp…ects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.
- Softcover
Seller: moluna, Greven, Germanymoluna
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£ 218.43
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Condition: New. Proceedings of the NATO Advanced Research Workshop on The Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, August 31-September 2, 1992 The Advanced Research Workshop on the Physical Properties of Semic.
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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£ 255.85
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Paperback. Condition: Brand New. 272 pages. 9.25x6.10x0.62 inches. In Stock.
- Softcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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- Softcover
Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
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£ 246.00
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- Softcover
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- Hardcover
Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
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- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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£ 267.96
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Taschenbuch. Condition: Neu. Neuware - The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor i…nterfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.
- Hardcover
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Seller: moluna, Greven, Germanymoluna
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£ 160.07
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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Research Workshop on The Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, August 31-September 2, 1992 The Advanced Research…Workshop on the Physical Properties of Semic.
Language: English
Published by Springer Netherlands, Springer Netherlands Jul 1993 1993
- Hardcover
- Print on Demand
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
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£ 190.23
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts…in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling. 272 pp. Englisch.
More images- Hardcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
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£ 165.97
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Buch. Condition: Neu. Semiconductor Interfaces at the Sub-Nanometer Scale | M. D. Pashley (u. a.) | Buch | NATO Science Series E: | xi | Englisch | 1993 | Springer | EAN 9780792323976 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbiete…r: preigu Print on Demand.
Language: English
Published by Springer Netherlands, Springer Jul 1993 1993
- Hardcover
- Print on Demand
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
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£ 190.23
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Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in d…ifferent aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 272 pp. Englisch.
- Hardcover
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Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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£ 260.94
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Condition: New. Print on Demand pp. 272.
- Softcover
- Print on Demand
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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£ 261.80
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Condition: New. Print on Demand pp. 272.
- Hardcover
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Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
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£ 266.73
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Condition: New. PRINT ON DEMAND pp. 272.
- Softcover
- Print on Demand
Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
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£ 267.67
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Condition: New. PRINT ON DEMAND pp. 272.
