Grubin Harold (72 results)
- Hardcover
Seller: Library House Internet Sales, Grand Rapids, OH, U.S.A.Library House Internet Sales
Contact seller5-star sellerHardcover. Condition: Good. No Jacket. The Gunn-Hilsum Effect covers the physical principles controlling the operation of transferred electron devices. These devices have been proven quite useful in the generation, amplification, and processing of microwave signals well into tens of gigahertz range. Organized into seven chapters…, the book focuses on the analytical and numerical approaches of the two vital aspects of device behavior for a given bulk semiconductor: boundary conditions or contacts and the local circuit environment. The opening chapter of this book discusses the negative differential mobility (NDM) characteristics for a range of electric fields in the velocity-field relation of specific semiconductors and the response of such a sample to a charge fluctuation, leading to the growth of stationary and/or traveling high electric field domains. The next two chapters describe how the boundary conditions and the circuit control the manifestation of current instabilities in such systems and how this control can be understood in a simple manner. Chapters 4 and 5 discuss the numerical and experimental investigations of comparatively long bulk samples, with an emphasis on the essential NDM semiconductor n-GaAs. These chapters also examine the production of different current-voltage relationships and instabilities by cathode contacts and the control of the oscillatory characteristics of an electrically unstable sample by different circuit conditions. Chapter 6 presents both time-independent and time-dependent computations, with the latter focusing on the small-signal impedance and stability aspects. The last chapter of this book addresses the construction and evaluation of typical short devices, describes how their oscillatory characteristics compare with the long samples studied in the first six chapters, and discusses the use of short devices as amplifiers. This book is an ideal source for device engineers and designers wishing to apply transferred electron devices in creative ways. Please note the image in this listing is a stock photo and may not match the covers of the actual item. Book.
- Softcover
Seller: California Books, Miami, FL, U.S.A.California Books
Contact seller5-star sellerCondition: New
£ 51.82
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Condition: New.
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 50.80
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Condition: New. In.
- Softcover
Seller: Chiron Media, Wallingford, United KingdomChiron Media
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£ 47.97
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Paperback. Condition: New.
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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£ 69.17
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Condition: New. pp. 376.
- Hardcover
Seller: BennettBooksLtd, Los Angeles, CA, U.S.A.BennettBooksLtd
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£ 67.27
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hardcover. Condition: New. In shrink wrap. Looks like an interesting title.
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
£ 54.85
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser exte…nt by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
Contact seller5-star sellerCondition: Used - Very good
£ 37.67
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Condition: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
- Hardcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
Contact seller5-star sellerCondition: New
£ 137.84
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Condition: New. In.
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 137.84
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Condition: New. In.
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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£ 154.31
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to de…vices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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£ 183.63
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Condition: New. pp. 480 Index.
- Hardcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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£ 184.81
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Condition: New. pp. 484 Index.
- Hardcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 189.04
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Condition: New. In.
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
Contact seller5-star sellerCondition: New
£ 189.04
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Condition: New. In.
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 189.04
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Condition: New. In.
- Hardcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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£ 189.04
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Condition: New. In.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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£ 189.03
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Condition: New.
- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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£ 211.06
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Condition: New.
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
Contact seller5-star sellerCondition: New
£ 196.61
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Paperback. Condition: Brand New. reprint edition. 480 pages. 9.25x6.10x1.09 inches. In Stock.
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
£ 205.80
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite compl…icated and involves many aspects, the device engineering is mostly to devise a 'best' device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
Contact seller4-star sellerCondition: New
£ 241.27
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Condition: New. pp. 556 Index.
- Hardcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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£ 242.35
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Condition: New. pp. 556 Index.
Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, Held July 17-30, 1
Ferry, David K.|Grubin, Harold L.|Jacoboni, Carlo|Jauho, A.-P.
- Hardcover
Seller: moluna, Greven, Germanymoluna
Contact seller5-star sellerCondition: New
£ 218.52
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Gebunden. Condition: New. Proceedings of a NATO ASI held in Il Ciocco, Italy, July 17-30, 1994 The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) an.
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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£ 271.35
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Condition: New. pp. 748.
- Hardcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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£ 273.28
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Condition: New. pp. 748.
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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£ 256.05
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Paperback. Condition: Brand New. reprint edition. 744 pages. 9.26x6.11x1.57 inches. In Stock.
- Hardcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
£ 278.47
£ 26.21 shippingShips from Germany to U.S.A.Quantity: 2 available
Buch. Condition: Neu. Neuware - The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engin…eering is mostly to devise a 'best' device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
Contact seller5-star sellerCondition: Used - As new
£ 285.99
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Condition: As New. Unread book in perfect condition.
- Softcover
Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
Contact seller4-star sellerCondition: Used - As new
£ 276.00
£ 25.00 shippingShips from United Kingdom to U.S.A.Quantity: 1 available
Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
