Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17–30, ... Italy: 342 (NATO Science Series B:, 342) - Hardcover

Hardcover

ISBN 10: 0306449994 ISBN 13: 9780306449994

Publisher: Springer, 1995

Synopsis

The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.

About this title

Review

`This work is outstanding....The charm of the work lies herein, that it presents in a coherent fashion a great deal of valuable material. I strongly recommend it in particular to graduate students in experimental semiconductor physics.'
Contemporary Physics

Synopsis

Proceedings of a NATO Advanced Study Institute held in Il Ciocco. Italy, July 1994, as a method of discussing issues in modeling of quantum effects relative to device modeling for future ultrasmall devices, and as a method of training newcomers in the approaches that have been used. The proceedings include not only the manuscripts of the major lect

Edition details

• Publisher: Springer
• Publication date: 1995
• Language: English
• ISBN 10: 0306449994
• ISBN 13: 9780306449994
• Binding: Hardcover
• Number of pages: 554
• Editor: Ferry David K., Grubin Harold L., Jacoboni Carlo, Jauho A.-P.