Cappelletti Paulo (21 results)
Language: English
Published by Kluwer Academic Publishers, Norwell, Massachusetts, U.S.A., 1999
- Hardcover
- First Edition
Seller: PsychoBabel & Skoob Books, Didcot, United KingdomPsychoBabel & Skoob Books
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hardcover. Condition: Very Good. No Dust Jacket. First Edition. Hardcover with white lettering on spine and upper board and contents in almost new condition, showing minimal signs of wear. Previous owner's name on FEP. No dust jacket. T. Used.
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Seller: GoldBooks, Denver, CO, U.S.A.GoldBooks
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Hardcover. Condition: new. New Copy. Customer Service Guaranteed.
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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Condition: New.
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- Softcover
Seller: moluna, Greven, Germanymoluna
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Seller: moluna, Greven, Germanymoluna
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£ 236.68
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Gebunden. Condition: New.
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Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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Condition: New. In.
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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Condition: New. In.
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Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Condition: As New. Unread book in perfect condition.
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- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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Condition: As New. Unread book in perfect condition.
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- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electron…s were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were…injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
Flash Memories
Cappelletti, Paulo (Editor) / Golla, Carla (Editor) / Olivo, Piero (Editor) / Zanoni, Enrico (Editor)
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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Paperback. Condition: Brand New. 551 pages. 9.30x6.20x1.20 inches. In Stock.
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Seller: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Condition: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days. Excellent Customer Service.
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- Print on Demand
Seller: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Condition: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days. Excellent Customer Service.
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot… electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5]. 556 pp. Englisch.
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Seller: preigu, Osnabrück, Germanypreigu
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Taschenbuch. Condition: Neu. Flash Memories | Paulo Cappelletti (u. a.) | Taschenbuch | xi | Englisch | 2014 | Springer US | EAN 9781461372783 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
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Seller: preigu, Osnabrück, Germanypreigu
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Buch. Condition: Neu. Flash Memories | Paulo Cappelletti (u. a.) | Buch | xi | Englisch | 1999 | Springer US | EAN 9780792384878 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
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Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
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£ 283.63
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Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot ele…ctrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 556 pp. Englisch.
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Language: English
Published by Springer US, Springer New York Feb 2014, 2014
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Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
Contact seller5-star sellerCondition: New
£ 283.63
£ 51.47 shippingShips from Germany to U.S.A.Quantity: 1 available
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which…hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 556 pp. Englisch.
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
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£ 367.78
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in wh…ich hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5]. 556 pp. Englisch.
