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Advanced Mos Devices and Their Circuit Applications
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Advanced MOS Devices and their Circuit Applications
Language: English
Published by Taylor & Francis Ltd, 2025
ISBN 10: 1032670266 ISBN 13: 9781032670263
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
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Paperback / softback. Condition: New. New copy - Usually dispatched within 4 working days.
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Advanced Mos Devices and Their Circuit Applications
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Advanced MOS Devices and their Circuit Applications
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Advanced Mos Devices and Their Circuit Applications
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Advanced Mos Devices and Their Circuit Applications
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Advanced MOS Devices and their Circuit Applications
Language: English
Published by Taylor & Francis Ltd, 2024
ISBN 10: 1032392851 ISBN 13: 9781032392851
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
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Advanced MOS Devices and their Circuit Applications
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Advanced MOS Devices and their Circuit Applications (Paperback)
Language: English
Published by Taylor & Francis Ltd, London, 2025
ISBN 10: 1032670266 ISBN 13: 9781032670263
Paperback. Condition: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Advanced MOS Devices and their Circuit Applications
Seller: PBShop.store UK, Fairford, GLOS, United Kingdom
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Add to basketPAP. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Advanced MOS Devices and their Circuit Applications (Paperback)
Language: English
Published by Taylor & Francis Ltd, London, 2025
ISBN 10: 1032670266 ISBN 13: 9781032670263
Paperback. Condition: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
-
Advanced MOS Devices and their Circuit Applications (Paperback)
Language: English
Published by Taylor & Francis Ltd, London, 2025
ISBN 10: 1032670266 ISBN 13: 9781032670263
Paperback. Condition: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
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Advanced MOS Devices and their Circuit Applications
Seller: PBShop.store UK, Fairford, GLOS, United Kingdom
Seller rating 4 out of 5 stars
£ 121.23
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Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketHRD. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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HRD. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Condition: New. PRINT ON DEMAND.
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Dr. Ankur Beohar (Senior member IEEE) obtaineda PhD degree in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2018. After getting his PhD, he worked as a postdoctoral fellow in the Device Model.
