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Hardback or Cased Book. Condition: New. The 1st International Conference on Computational Engineering and Intelligent Systems. Book.
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Transport in metal-oxide-semiconductor structures : mobile ions effects on the oxide properties. Engineering materials
Book 7 of 110: Engineering MaterialsLanguage: English
Published by Berlin ; Heidelberg : Springer, 2011
ISBN 10: 3642163033 ISBN 13: 9783642163036
Seller: Kepler-Buchversand Huong Bach, Weil der Stadt, Germany
Seller rating 4 out of 5 stars
Gr.-8°, gebundene Ausgabe. Condition: Sehr gut. XIII, 104 S. : graph. Darst. Gebraucht: sehr guter Zustand. Contents: Introduction / The MOS STructure / The MOS Oxide and its Defects / Review of Transport Mechanism in Thin Oxides / of MOS Devices / Experimental Techniques / Theoretical Approaches of Mobile Ions Density Distribution Determination / Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide / Index. Sprache: Englisch Gewicht in Gramm: 315.
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Condition: As New. Unread book in perfect condition.
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The 1st International Conference on Computational Engineering and Intelligent Systems
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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The 1st International Conference On Computational Engineering And Intelligent Systems
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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The 2nd International Conference on Computational Engineering and Intelligent Systems
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The 1st International Conference On Computational Engineering And Intelligent Systems
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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Condition: As New. Unread book in perfect condition.
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Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties (Engineering Materials)
Book 7 of 110: Engineering MaterialsSeller: Ria Christie Collections, Uxbridge, United Kingdom
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Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties (Engineering Materials)
Book 7 of 110: Engineering MaterialsSeller: Ria Christie Collections, Uxbridge, United Kingdom
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Paperback. Condition: Brand New. 2011 edition. 117 pages. 9.25x6.10x0.28 inches. In Stock.
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Hardcover. Condition: Brand New. 104 pages. 9.00x6.25x0.75 inches. In Stock.
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Hardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Transport in Metal-Oxide-Semiconductor Structures : Mobile Ions Effects on the Oxide Properties
Book 7 of 110: Engineering MaterialsLanguage: English
Published by Springer Berlin Heidelberg, Springer Berlin Heidelberg, 2011
ISBN 10: 3642163033 ISBN 13: 9783642163036
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
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Transport in Metal-Oxide-Semiconductor Structures : Mobile Ions Effects on the Oxide Properties
Book 7 of 110: Engineering MaterialsLanguage: English
Published by Springer Berlin Heidelberg, 2013
ISBN 10: 3642266886 ISBN 13: 9783642266881
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
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Taschenbuch. Condition: Neu. Transport in Metal-Oxide-Semiconductor Structures | Mobile Ions Effects on the Oxide Properties | Hamid Bentarzi | Taschenbuch | xiv | Englisch | 2013 | Springer Vieweg | EAN 9783642266881 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Transport in Metal-Oxide-Semiconductor Structures
Book 7 of 110: Engineering MaterialsLanguage: English
Published by Springer Berlin Heidelberg, Springer Berlin Heidelberg Jan 2011, 2011
ISBN 10: 3642163033 ISBN 13: 9783642163036
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. Neuware -This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 120 pp. Englisch.
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Transport in Metal-Oxide-Semiconductor Structures : Mobile Ions Effects on the Oxide Properties
Book 7 of 110: Engineering Materials£ 63.68 10% off£ 57.32
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Add to basketCondition: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
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Optimizing and Measuring Smart Grid Operation and Control
Language: English
Published by Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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Optimizing and Measuring Smart Grid Operation and Control
Language: English
Published by Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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Optimizing and Measuring Smart Grid Operation and Control
Language: English
Published by Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Condition: New.
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Optimizing and Measuring Smart Grid Operation and Control
Language: English
Published by Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Condition: As New. Unread book in perfect condition.
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Optimizing and Measuring Smart Grid Operation and Control
Language: English
Published by Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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Optimizing and Measuring Smart Grid Operation and Control
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
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Optimizing and Measuring Smart Grid Operation and Control
Language: English
Published by Engineering Science Reference, 2020
ISBN 10: 1799840271 ISBN 13: 9781799840275
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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Optimizing and Measuring Smart Grid Operation and Control
Language: English
Published by Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Condition: New.
