Transport in Metal-Oxide-Semiconductor Structures : Mobile Ions Effects on the Oxide Properties

Language: English

Published by Springer, 2013

3642266886 / 9783642266881

Series: Book 7 of 110 - Engineering Materials

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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Softcover

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Druck auf Anfrage Neuware - Printed after ordering - This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Seller Inventory # 9783642266881

Title
Transport in Metal-Oxide-Semiconductor Structures : Mobile Ions Effects on the Oxide Properties
Author
Hamid Bentarzi
Publisher
Springer
Publication year
2013
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3642266886
ISBN 13
9783642266881
Item weight
195 grams
Dimensions
235x155x7 mm
Series
Book 7 of 110: Engineering Materials

AHA-BUCH GmbH

Einbeck, Germany

5-star seller

AbeBooks seller since August 14, 2006

Shipping rates from Germany to U.S.A.

Item7 to 10 business days5 to 7 business days
First item£ 29.46£ 37.88
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Einbeck, Germany 37574