Semiconductor Equations by Peter Markowich (30 results)
- Hardcover
Seller: Midtown Scholar Bookstore, Harrisburg, U.S.A.Midtown Scholar Bookstore
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Hardcover. Condition: Good. some shelfwear/edgewear but still NICE! - may have remainder mark or previous owner's name Standard-sized.
Language: English
Published by Springer Verlag 1986
Series: Computational Microelectronics, Book 2 of 17. Book 2 of 17 - Computational Microelectronics
- Hardcover
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Hard Cover. Condition: Good. No Jacket. Hard cover. Usual ex-library features. The interior is clean and tight. Binding is good. Cover shows slight wear. Library label taped on front. 193 pages. Ex-Library.
Semiconductor equations P. A. Markowich, C. A. Ringhofer, C. Schmeiser.
Markowich, Peter A.; Ringhofer, Christian A.; Schmeiser, Christian
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Seller: Antiquariat Bookfarm, Löbnitz, GermanyAntiquariat Bookfarm
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Hardcover. Ex-library with stamp and library-signature. GOOD condition, some traces of use. Ancien Exemplaire de bibliothèque avec signature et cachet. BON état, quelques traces d'usure. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. 82 MAR 9783211821572 Sprache: Englisch Gewicht in…Gramm: 550.
Language: English
Published by Springer Nature (Sie) 2020
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Hardcover. 268 S. Ex-library with stamp and library-signature in good condition, some traces of use. C-01150 3211821570 Sprache: Englisch Gewicht in Gramm: 550.
- Softcover
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Paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
- Softcover
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- Hardcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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Language: English
Published by Springer 1986
Series: Computational Microelectronics, Book 2 of 17. Book 2 of 17 - Computational Microelectronics
- Hardcover
Seller: Books Puddle, New York, U.S.A.Books Puddle
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Condition: New. pp. ix + 193 Index.
- Softcover
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PF. Condition: New.
Language: English
Published by Springer 1986
Series: Computational Microelectronics, Book 2 of 17. Book 2 of 17 - Computational Microelectronics
- Hardcover
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Condition: New. pp. ix + 193 Illus.
Language: English
Published by Springer 1986
Series: Computational Microelectronics, Book 2 of 17. Book 2 of 17 - Computational Microelectronics
- Hardcover
Seller: Biblios, frankfurt am main, GermanyBiblios
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Condition: New. pp. ix + 193.
- Hardcover
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- Softcover
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- Hardcover
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Condition: New. pp. 268.
- Softcover
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Paperback. Condition: Brand New. reprint edition. 248 pages. 9.00x6.25x0.75 inches. In Stock.
More images- Softcover
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Taschenbuch. Condition: Neu. Semiconductor Equations | Peter A. Markowich (u. a.) | Taschenbuch | x | Englisch | 2011 | Springer | EAN 9783709174524 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
- Softcover
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavio…r of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
- Hardcover
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of se…miconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
- Hardcover
Seller: Mispah books, Redhill, United KingdomMispah books
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Hardcover. Condition: Like New. Like New. book.
Language: English
Published by Springer, Wien, Springer Vienna, Springer 1985
Series: Computational Microelectronics, Book 2 of 17. Book 2 of 17 - Computational Microelectronics
- Hardcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Buch. Condition: Neu. Neuware - In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view.…I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.
Published by Springer Berlin 1981 1981
- Hardcover
Seller: Antiquariat Thomas & Reinhard, Recklinghausen, GermanyAntiquariat Thomas & Reinhard
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Add to basketFormat groß 8°, 193 Seiten, dies ist ein regulär ausgesondertes Bibliotheksexemplar aus einer wissenschaftlichen Bibliothek, keine Markierungen / Anmerkungen, das Buch befindet sich in einem sehr guten Zustand --- Hardcover, 193 pages, Lib.Ex., no marks, the book is in a very good condition. Shipping to abroad insured with track…ing number.
Seller: Antikvariat Röde Orm, Göteborg, SwedenAntikvariat Röde Orm
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Add to basketSpringer-Verlag, Wien 1990. Publishers decorated boards. 248 pages. Blind pressed name stamp on the first blank page. Signature on the front end-paper and the title page. Nice copy in very fine condition.
- Softcover
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- Softcover
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the el…ectrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices. 268 pp. Englisch.
- Hardcover
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrica…l behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices. 268 pp. Englisch.
- Hardcover
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Condition: New. Print on Demand pp. 268 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
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Condition: New. PRINT ON DEMAND pp. 268.
- Softcover
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electr…ical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 268 pp. Englisch.
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Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical be…havior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 268 pp. Englisch.
