Properties Indium Phosphide by Inspec (10 results)
More imagesLanguage: English
Published by The Institution of Engineering and Technology, 1991
- Hardcover
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Condition: GOOD. 1991 HC/no jacket. INSPEC (Institution of Electrical Engineers). Withdrawn from technical library w/some library signage. Boards have some marks, but pages are pristine and clean.

Language: English
Published by The Institution of Engineering and Technology, 1991
- Hardcover
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Language: English
Published by The Institution of Engineering and Technology, 1990
- Softcover
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Language: English
Published by The Institution of Engineering and Technology, 1990
- Softcover
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Condition: As New. Unread book in perfect condition.

Language: English
Published by The Institution of Engineering and Technology, 1990
- Softcover
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Language: English
Published by The Institution of Engineering and Technology, 1990
- Softcover
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Language: English
Published by The Institution of Engineering and Technology, 1990
- Softcover
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- Softcover
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Condition: New. KlappentextrnrnIndium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties se.

Language: English
Published by Institution Of Engineering And Technology, 1991
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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Paperback. Condition: Brand New. 516 pages. 10.80x8.10x1.30 inches. In Stock.

Language: English
Published by Institution Of Engineering & Technology Dez 1990, 1990
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. Neuware - Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detection; surfaces; interfaces; oxidation; etching; ion implantation; and exploitation in devices.…