Properties Indium Phosphide by Inspec (10 results)

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    Language: English

    Published by The Institution of Engineering and Technology, 1991

    0852964919 / 9780852964910

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    Condition: GOOD. 1991 HC/no jacket. INSPEC (Institution of Electrical Engineers). Withdrawn from technical library w/some library signage. Boards have some marks, but pages are pristine and clean.

  • Language: English

    Published by The Institution of Engineering and Technology, 1991

    0852964919 / 9780852964910

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  • Language: English

    Published by The Institution of Engineering and Technology, 1990

    086341642X / 9780863416422

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    Language: English

    Published by The Institution of Engineering and Technology, 1990

    086341642X / 9780863416422

    • Softcover

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  • Language: English

    Published by The Institution of Engineering and Technology, 1990

    086341642X / 9780863416422

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  • Language: English

    Published by The Institution of Engineering and Technology, 1990

    086341642X / 9780863416422

    • Softcover

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  • Language: English

    Published by The Institution of Engineering and Technology, 1990

    086341642X / 9780863416422

    • Softcover

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    Language: English

    Published by INSTITUTION OF ENGINEERING & T, 1990

    086341642X / 9780863416422

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    Kartoniert / Broschiert. Condition: New. KlappentextrnrnIndium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties se.

  • Language: English

    Published by Institution Of Engineering And Technology, 1991

    086341642X / 9780863416422

    • Softcover

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    Paperback. Condition: Brand New. 516 pages. 10.80x8.10x1.30 inches. In Stock.

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    Language: English

    Published by Institution Of Engineering & Technology Dez 1990, 1990

    086341642X / 9780863416422

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    Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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    Taschenbuch. Condition: Neu. Neuware - Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detect