Modulation Doped Field Effect (45 results)
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Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Seller: BargainBookStores, Grand Rapids, MI, U.S.A.BargainBookStores
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Paperback or Softback. Condition: New. An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors. Book.
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Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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Seller: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.Romtrade Corp.
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£ 42.74
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Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Seller: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.Romtrade Corp.
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Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Seller: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Seller: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Seller: BargainBookStores, Grand Rapids, MI, U.S.A.BargainBookStores
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£ 47.42
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Paperback or Softback. Condition: New. Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors. Book.
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Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
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Seller: StainesBook, Weybridge, SURRE, United KingdomStainesBook
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Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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Condition: Used. pp. 455.
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Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condition: Used. pp. 455.
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Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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Seller: moluna, Greven, Germanymoluna
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£ 21.50
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Condition: New. KlappentextrnrnThe effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the qua.
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Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
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£ 56.81
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Condition: Used. pp. 455.
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Seller: UK BOOKS STORE, London, LONDO, United KingdomUK BOOKS STORE
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£ 65.71
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Condition: New Books. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 6-10 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested… if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
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Seller: SHIMEDIA, Brooklyn, NY, U.S.A.SHIMEDIA
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Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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Condition: As New. Unread book in perfect condition.
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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. Neuware - The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsibl…e for device operation. AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0.45 -1.2 MeV electrons up to doses of 6 1016 e /cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements. Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation. I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents. These increased currents are only maintained at low temperatures (T greater than 300 K). It is believed that the increase in gate current is caused by an increase in the electron trap concentration of the AlxGa1-xN layer. This increase in trap concentration directly increases the trap-assisted tunneling current resulting in the observed increase in gate current. The mechanism causing the increase in drain current is unknown. Several theories explaining this increase are presented along with the additional research necessary to illuminate the correct theory. This is the first experiment involving electron radiation of AlxGa1-xN/GaN MODFETs.
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Seller: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
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paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Seller: BennettBooksLtd, Los Angeles, CA, U.S.A.BennettBooksLtd
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hardcover. Condition: New. In shrink wrap. Looks like an interesting title.
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Seller: SHIMEDIA, Brooklyn, NY, U.S.A.SHIMEDIA
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Seller: moluna, Greven, Germanymoluna
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Condition: New. KlappentextrnrnIn this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation a.
