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Modulation Doped Field Effect (48 results)
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors (Paperback or Softback)
Language: English
Published by Biblioscholar 10/26/2012, 2012
ISBN 10: 1286861640 ISBN 13: 9781286861646
Paperback or Softback. Condition: New. An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors. Book.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 16.24
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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Condition: New. pp. 455.
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Condition: New. pp. 455.
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Modulation-Doped Field-Effect Transistors: Principles, Design and Technology
Language: English
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Condition: New. pp. 516.
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Modulation-Doped Field-Effect Transistors: Principles, Design and Technology
Language: English
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Condition: New. pp. 516.
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Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Condition: New. pp. 455.
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Condition: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.
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Condition: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.
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Modulation-Doped Field-Effect Transistors: Principles, Design and Technology
Language: English
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Condition: New. pp. 516.
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Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors (Paperback or Softback)
Language: English
Published by Biblioscholar 10/17/2012, 2012
ISBN 10: 1249836565 ISBN 13: 9781249836568
Paperback or Softback. Condition: New. Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors. Book.
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Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 45.58
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27Ga0.73N/Gan Modulation Doped Field Effect Transistors
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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Condition: New. KlappentextrnrnThe effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the qua.
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Condition: New. Satisfaction Guaranteed or your money back.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Language: English
Published by Creative Media Partners, LLC Okt 2012, 2012
ISBN 10: 1286861640 ISBN 13: 9781286861646
Taschenbuch. Condition: Neu. Neuware - The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation. AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0.45 -1.2 MeV electrons up to doses of 6 1016 e /cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements. Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation. I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents. These increased currents are only maintained at low temperatures (T greater than 300 K). It is believed that the increase in gate current is caused by an increase in the electron trap concentration of the AlxGa1-xN layer. This increase in trap concentration directly increases the trap-assisted tunneling current resulting in the observed increase in gate current. The mechanism causing the increase in drain current is unknown. Several theories explaining this increase are presented along with the additional research necessary to illuminate the correct theory. This is the first experiment involving electron radiation of AlxGa1-xN/GaN MODFETs.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Language: English
Published by Creative Media Partners, LLC, 2012
ISBN 10: 1286861640 ISBN 13: 9781286861646
PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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hardcover. Condition: New. In shrink wrap. Looks like an interesting title!
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Condition: New. KlappentextrnrnIn this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation a.
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Condition: New. Satisfaction Guaranteed or your money back.
