Materials Processes Integration Reliability by Lin Qinghuang (14 results)

Paperback. Condition: new. Paperback. In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Condition: New.

Condition: New. In.

PF. Condition: New.

Condition: New. pp. 358.

Paperback. Condition: new. Paperback. In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

Paperback. Condition: new. Paperback. In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.

Paperback. Condition: Brand New. 1st edition. 358 pages. 9.02x5.98x0.75 inches. In Stock. This item is printed on demand.

Paperback / softback. Condition: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days 480.

Condition: New. Print on Demand pp. 358.

Condition: New. PRINT ON DEMAND pp. 358.

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconne.

Taschenbuch. Condition: Neu. Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- And Nanoelectronics | Volume 990: Symposium Held April 10 12, 20 | Qinghuang Lin (u. a.) | Taschenbuch | Kartoniert / Broschiert | Englisch | 2012 | Cambridge University Press | EAN 9781107408715 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.