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High Mobility Quantum Transistors by Hellings Geert (19 results)
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Condition: As New. Unread book in perfect condition.
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High Mobility and Quantum Well Transistors: Design and TCAD Simulation (Springer Series in Advanced Microelectronics, 42)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 96.88
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Ships from United Kingdom to U.S.A.Quantity: Over 20 available
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High Mobility and Quantum Well Transistors: Design and TCAD Simulation (Springer Series in Advanced Microelectronics, 42)
Book 35: Springer Series in Advanced MicroelectronicsSeller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 96.88
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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PF. Condition: New.
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High Mobility and Quantum Well Transistors : Design and TCAD Simulation
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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High Mobility and Quantum Well Transistors : Design and TCAD Simulation
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: As New. Unread book in perfect condition.
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Condition: New. pp. 160.
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Hardcover. Condition: Brand New. 140 pages. 9.50x6.25x0.75 inches. In Stock.
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Taschenbuch. Condition: Neu. High Mobility and Quantum Well Transistors | Design and TCAD Simulation | Geert Hellings (u. a.) | Taschenbuch | xviii | Englisch | 2015 | Springer | EAN 9789400795693 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Condition: New. Print on Demand pp. 140.
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High Mobility and Quantum Well Transistors
Language: English
Published by Springer Netherlands, 2013
ISBN 10: 9400763395 ISBN 13: 9789400763395
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. A comprehensive explanation of Quantum Well-based transistors and their electrical behaviourA consistent set of TCAD models and parameters allows simulating the fabrication process and the electrical behaviour of a Germanium pFET technology.
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High Mobility and Quantum Well Transistors
Language: English
Published by Springer Netherlands, 2015
ISBN 10: 9400795696 ISBN 13: 9789400795693
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. A comprehensive explanation of Quantum Well-based transistors and their electrical behaviourA consistent set of TCAD models and parameters allows simulating the fabrication process and the electrical behaviour of a Germanium pFET technology.
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Condition: New. PRINT ON DEMAND pp. 160.
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Condition: New. Print on Demand pp. 160 77 Illus.
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High Mobility and Quantum Well Transistors
Language: English
Published by Springer, Springer Apr 2013, 2013
ISBN 10: 9400763395 ISBN 13: 9789400763395
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET ¿ is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 160 pp. Englisch.
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High Mobility and Quantum Well Transistors
Language: English
Published by Springer, Springer Apr 2015, 2015
ISBN 10: 9400795696 ISBN 13: 9789400795693
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET ¿ is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 160 pp. Englisch.
