High Mobility Quantum Transistors by Hellings Geert (19 results)
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Hardcover. Condition: Brand New. 140 pages. 9.50x6.25x0.75 inches. In Stock.
Language: English
Published by Springer 2015
Series: Springer Series in Advanced Microelectronics, Book 35. Book 35 - Springer Series in Advanced Microelectronics
- Softcover
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Taschenbuch. Condition: Neu. High Mobility and Quantum Well Transistors | Design and TCAD Simulation | Geert Hellings (u. a.) | Taschenbuch | xviii | Englisch | 2015 | Springer | EAN 9789400795693 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]…com | Anbieter: preigu.
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. A comprehensive explanation of Quantum Well-based transistors and their electrical behaviourA consistent set of TCAD models and parameters allows simulating the fabrication process and the electrical behaviour of a Ge…rmanium pFET technology.
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Seller: moluna, Greven, Germanymoluna
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. A comprehensive explanation of Quantum Well-based transistors and their electrical behaviourA consistent set of TCAD models and parameters allows simulating the fabrication process and the electrical behaviour of a Ge…rmanium pFET technology.
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Seller: Biblios, frankfurt am main, GermanyBiblios
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Condition: New. PRINT ON DEMAND pp. 160.
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Condition: New. Print on Demand pp. 160 77 Illus.
Language: English
Published by Springer 2015
Series: Springer Series in Advanced Microelectronics, Book 35. Book 35 - Springer Series in Advanced Microelectronics
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Seller: Biblios, frankfurt am main, GermanyBiblios
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Condition: New. PRINT ON DEMAND pp. 140.
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Seller: buchversandmimpf2000, Emtmannsberg, Germanybuchversandmimpf2000
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Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting o…ption to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET ¿ is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 160 pp. Englisch.
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Seller: buchversandmimpf2000, Emtmannsberg, Germanybuchversandmimpf2000
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£ 95.28
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One intere…sting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET ¿ is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 160 pp. Englisch.
