Characterization Crystal Growth Defects (15 results)
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Seller: Biblios, frankfurt am main, GermanyBiblios
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gebundene Ausgabe. Condition: Gut. 589 Seiten Das hier angebotene Buch stammt aus einer teilaufgelösten Bibliothek und kann die entsprechenden Kennzeichnungen aufweisen (Rückenschild, Instituts-Stempel.); der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. Original-Schutzumschlag vorhanden (siehe Foto). In E…NGLISCHER Sprache. Sprache: Englisch Gewicht in Gramm: 1125.
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Paperback. Condition: Brand New. reprint edition. 615 pages. 10.00x7.01x1.40 inches. In Stock.
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Taschenbuch. Condition: Neu. Characterization of Crystal Growth Defects by X-Ray Methods | B. K. Tanner | Taschenbuch | NATO Science Series B: | xxvi | Englisch | 2012 | Humana | EAN 9781475711288 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]…com | Anbieter: preigu.
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book contains the proceedings of a NATO Advanced Study Institute entitled 'Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in…electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book contains the proceedings of a NATO Advanced Study Institute entitled 'Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The curr…ent interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies. 616 pp. Englisch.
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Condition: New. Print on Demand pp. 616 66:B&W 7 x 10 in or 254 x 178 mm Perfect Bound on White w/Gloss Lam.
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Seller: Biblios, frankfurt am main, GermanyBiblios
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Condition: New. PRINT ON DEMAND pp. 616.
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Seller: moluna, Greven, Germanymoluna
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book contains the proceedings of a NATO Advanced Study Institute entitled Characterization of Crystal Growth Defects by X-ray Methods held in the University of Durham, England from 29th August to 10th September 1…979. The current interest in electroni.
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book contains the proceedings of a NATO Advanced Study Institute entitled 'Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current…interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 616 pp. Englisch.
