ISBN: 9783662496817 - The Source/drain Engineering of Nanoscale Germanium-based Mos Devices (springer Theses) (8 results)

Condition: New. pp. 59.

Gebunden. Condition: New.

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.…

Condition: new. Questo è un articolo print on demand.

Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. 80 pp. Englisch.…

Condition: New. Print on Demand pp. 59.

Condition: New. PRINT ON DEMAND pp. 59.

Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600¿ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10¿7¿¿cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 80 pp. Englisch.…