The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Language: English

Published by Springer, 2016

366249681X / 9783662496817

Series: Book 107 of 797 - Springer Theses

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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Druck auf Anfrage Neuware - Printed after ordering - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Seller Inventory # 9783662496817

Title
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Author
Zhiqiang Li
Publisher
Springer
Publication year
2016
Condition
Neu
Binding
Buch
Language
English
ISBN 10
366249681X
ISBN 13
9783662496817
Item weight
258 grams
Dimensions
241x160x10 mm
Series
Book 107 of 797: Springer Theses

AHA-BUCH GmbH

Einbeck, Germany

5-star seller

AbeBooks seller since August 14, 2006

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