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9781286861400 - Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors by Feller, Brian P (13 results)
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Condition: As New. Unread book in perfect condition.
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Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors (Paperback or Softback)
Language: English
Published by Biblioscholar 10/26/2012, 2012
ISBN 10: 1286861403 ISBN 13: 9781286861400
Paperback or Softback. Condition: New. Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors. Book.
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Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 13.98
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: As New. Unread book in perfect condition.
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Condition: New. KlappentextrnrnThin films of GaN, Al0.1Ga0.9N, and ZnO were implanted with Cr, Mn, and nickel Ni to produce dilute magnetic semiconductors. Optical and magnetic techniques were used to evaluate crystal structure restoration and coercive field st.
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Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors
Language: English
Published by Creative Media Partners, LLC, 2012
ISBN 10: 1286861403 ISBN 13: 9781286861400
PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors
Language: English
Published by Creative Media Partners, LLC Okt 2012, 2012
ISBN 10: 1286861403 ISBN 13: 9781286861400
Taschenbuch. Condition: Neu. Neuware - Thin films of GaN, Al0.1Ga0.9N, and ZnO were implanted with Cr, Mn, and nickel Ni to produce dilute magnetic semiconductors. Optical and magnetic techniques were used to evaluate crystal structure restoration and coercive field strength as a function of implant species and annealing temperature. Maximum crystal restoration was obtained for Al0.1Ga0.9N after annealing at 675 oC; for Cr implanted p-GaN after annealing at 750 oC; for Mn or Ni implanted p-GaN after annealing at 675 oC; for Cr implanted ZnO after annealing at 700 oC; for Mn implanted ZnO after annealing at 675 oC; and for Ni implanted ZnO after annealing at 650 oC. Maximum coercive field strengths were found for Cr implanted Al0.1Ga0.9N after annealing at 750 oC; for Mn implanted Al0.1Ga0.9N after annealing at 675 oC; for Ni implanted Al0.1Ga0.9N after annealing at 700 oC; for Cr or Mn implanted p-GaN after annealing at 725 oC; for Ni implanted p-GaN after annealing at 675 oC; for Cr or Ni implanted ZnO after annealing at 725 oC; and for Mn implanted ZnO after annealing at 725 oC. Optimum annealing conditions for optical and magnetic properties of the implanted wide band gap semiconductors agree with each other very well.
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Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors
Language: English
Published by Creative Media Partners, LLC, 2012
ISBN 10: 1286861403 ISBN 13: 9781286861400
Seller: PBShop.store UK, Fairford, GLOS, United Kingdom
Seller rating 5 out of 5 stars
£ 15.30
£ 3.29 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketPAP. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Condition: New. Print on Demand pp. 64.
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Condition: New. Print on Demand pp. 64.
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Condition: New. PRINT ON DEMAND pp. 64.
