9780792385752 - Mosfet Modeling & Bsim3 User’s Guide by Yuhua Cheng; Chenming Hu (19 results)
- Hardcover
Seller: HPB-Red, Dallas, TX, U.S.A.HPB-Red
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Hardcover. Condition: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority.
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Condition: Very Good. Very Good condition. A copy that may have a few cosmetic defects. May also contain light spine creasing or a few markings such as an owner's name, short gifter's inscription or light stamp.
- Hardcover
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- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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- Hardcover
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- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
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£ 143.18
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Condition: Gut. Zustand: Gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET mo…del for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. Itis helpful to experts and students alike.
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
Contact seller5-star sellerCondition: Used - Very good
£ 143.18
£ 89.24 shippingShips from Germany to U.S.A.Quantity: 1 available
Condition: Gut. Zustand: Gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET mo…del for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. Itis helpful to experts and students alike.
- Hardcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
Contact seller4-star sellerCondition: New
£ 241.95
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Condition: New. pp. 484.
- Hardcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
£ 195.32
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for sta…ndardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. Itis helpful to experts and students alike.
- Hardcover
Seller: BUCHSERVICE / ANTIQUARIAT Lars Lutzer, Wahlstedt, GermanyBUCHSERVICE / ANTIQUARIAT Lars Lutzer
Contact seller5-star sellerCondition: Used - Very good
£ 428.88
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Hardcover. Condition: gut. 1999. MOSFET Modeling & BSIM3 User¿s Guide In englischer Sprache. pages.
- Hardcover
- Print on Demand
Seller: Basi6 International, Irving, TX, U.S.A.Basi6 International
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£ 139.42
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Condition: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days.
- Hardcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
Contact seller5-star sellerCondition: New
£ 157.64
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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has… been selected as the first MOSFET model for st.
- Hardcover
- Print on Demand
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
Contact seller5-star sellerCondition: New
£ 187.34
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSF…ET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike. 480 pp. Englisch.
More images- Hardcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
£ 163.44
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Buch. Condition: Neu. MOSFET Modeling & BSIM3 User's Guide | Chenming Hu (u. a.) | Buch | xvi | Englisch | 1999 | Springer US | EAN 9780792385752 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
- Hardcover
- Print on Demand
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
Contact seller5-star sellerCondition: New
£ 187.34
£ 51.00 shippingShips from Germany to U.S.A.Quantity: 1 available
Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET m…odel for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools.In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3.MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters.It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model.MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction.This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3.MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. Itis helpful to experts and students alike.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 480 pp. Englisch.
- Hardcover
- Print on Demand
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
Contact seller4-star sellerCondition: New
£ 257.51
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Condition: New. Print on Demand pp. 484 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
- Hardcover
- Print on Demand
Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
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£ 264.16
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Condition: New. PRINT ON DEMAND pp. 484.
