Isbn: 9780387309309 - Ultra-low Power Wireless Technologies for Sensor Networks (integrated Circuits and Systems) (18 results)

Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Condition: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.

Condition: New. pp. 204.

Condition: New. pp. 204 Illus.

Condition: New. pp. 204.

Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Condition: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.

Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Hardcover. Condition: Good. Ex-library book, usual markings. Hardback/Hardcover. Clean copy in good condition. Quick dispatch from UK seller.

Condition: New. In English.

Hardcover. Condition: New Books. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 6-10 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability. …

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - transconductance e ciency of all critical devices in order to reduce the n- essary bias current. However, reducing the current density also results in a severely decreased device f . An optimization of the current density is re- T quired to provide the correct balance between transconductance e ciency and bandwidth. Plots such as Figure 2. 1 are useful tools for designers when choosing appropriate transistor bias points. Technology scaling allows greatly increased f realization for a given IC. Thus, weak inversion biasing for RF T design will become increasingly useful in future technology nodes. Throughout this work, the IC of critical transistors will be discussed. Most of the RF devices are biased in moderate to weak inversion to achieve enhanced transconductance e ciency and reduced bias current. 2. 2 MEMS Background The relatively new eld of Radio Frequency Microelectro Mechanical Systems (RF MEMS) provides unique opportunities for RF transceiver designers. This section provides background on RF MEMS and provides insight into the - portunities presented by these new technologies. The eld of RF MEMS - cludes the design and utilization of RF lters, resonators, switches, and other passive mechanical structures constructed using bulk processed integrated c- cuit fabrication techniques. To date, these devices have been commercially used as discrete board-mounted components, primarily used to enhance the miniaturization of mobile phones. However, RF MEMS components have the potential to be batch fabricated using existing integrated circuit fabrication techniques.…

Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -transconductance e ciency of all critical devices in order to reduce the n- essary bias current. However, reducing the current density also results in a severely decreased device f . An optimization of the current density is re- T quired to provide the correct balance between transconductance e ciency and bandwidth. Plots such as Figure 2. 1 are useful tools for designers when choosing appropriate transistor bias points. Technology scaling allows greatly increased f realization for a given IC. Thus, weak inversion biasing for RF T design will become increasingly useful in future technology nodes. Throughout this work, the IC of critical transistors will be discussed. Most of the RF devices are biased in moderate to weak inversion to achieve enhanced transconductance e ciency and reduced bias current. 2. 2 MEMS Background The relatively new eld of Radio Frequency Microelectro Mechanical Systems (RF MEMS) provides unique opportunities for RF transceiver designers. This section provides background on RF MEMS and provides insight into the - portunities presented by these new technologies. The eld of RF MEMS - cludes the design and utilization of RF lters, resonators, switches, and other passive mechanical structures constructed using bulk processed integrated c- cuit fabrication techniques. To date, these devices have been commercially used as discrete board-mounted components, primarily used to enhance the miniaturization of mobile phones. However, RF MEMS components have the potential to be batch fabricated using existing integrated circuit fabrication techniques. 184 pp. Englisch.…

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Includes an introduction to wireless sensor networksProblems specific to sensor node communications are described and addressedDesign methodologies presentedInvited chapters by leading research expertsIncludes an introduct.…