Yuri Tairov (7 results)

Paperback. Condition: Brand New. 80 pages. 8.66x5.98x0.71 inches. In Stock.

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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis's, 500 articles and conference thesis's in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov. 80 pp. Englisch.

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Tairov YuriProf. Yu.M. Tairov has worked in the field of SiC growth, characterization and device fabrication for more than 50 years. The modified method of sublimation growth - Modified-Lely method - was elaborated under direct of Pr.

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesisżs, 500 articles and conference thesisżs in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.Books on Demand GmbH, Überseering 33, 22297 Hamburg 80 pp. Englisch.

Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis's, 500 articles and conference thesis's in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.

Taschenbuch. Condition: Neu. The main defects of silicon carbide ingots and epitaxial layers | Topical review | Yuri Tairov (u. a.) | Taschenbuch | 80 S. | Englisch | 2016 | LAP Lambert Academic Publishing | EAN 9783659836213 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu Print on Demand.