Yuri Tairov (7 results)
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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Paperback. Condition: Brand New. 80 pages. 8.66x5.98x0.71 inches. In Stock.
- Softcover
Seller: preigu, Osnabrück, Germanypreigu
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Taschenbuch. Condition: Neu. The main defects of silicon carbide ingots and epitaxial layers | Topical review | Yuri Tairov (u. a.) | Taschenbuch | 80 S. | Englisch | 2016 | LAP Lambert Academic Publishing | EAN 9783659836213 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]…bod[dot]de | Anbieter: preigu.
- Softcover
Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
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paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Language: English
Published by LAP Lambert Academic Publishing Feb 2016, 2016
- Softcover
- Print on Demand
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide grow…ing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis's, 500 articles and conference thesis's in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov. 80 pp. Englisch.
- Softcover
- Print on Demand
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing b…ulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis's, 500 articles and conference thesis's in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.
- Softcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Tairov YuriProf. Yu.M. Tairov has worked in the field of SiC growth, characterization and device fabrication for more than 50 years. The modified method of sublimation growth - Modified-Lely method - wa…s elaborated under direct of Pr.
Language: English
Published by LAP Lambert Academic Publishing Feb 2016, 2016
- Softcover
- Print on Demand
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
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£ 21.15
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing…bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis¿s, 500 articles and conference thesis¿s in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.Books on Demand GmbH, Überseering 33, 22297 Hamburg 80 pp. Englisch.
