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Willander Jain Suresh (22 results)
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£ 105.43
Convert currency£ 7.73 shipping from Germany to United KingdomQuantity: 1 available
Add to basketCondition: Gut. Zustand: Gut | Seiten: 356 | Sprache: Englisch | Produktart: Bücher.
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£ 123.44
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Add to basketCondition: Very Good. 2000th Edition. Former library book; may include library markings. Used book that is in excellent condition. May show signs of wear or have minor defects.
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Compound Semiconductors Strained Layers and Devices (Electronic Materials Series, 7)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 139.22
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Add to basketCondition: New. In.
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Hardcover. Condition: Near Fine. 2nd Edition. Published by Academic Press in 2003, here is t7he extremely scarce 2nd edition hardback printing of Suresh Jain and M Willander's Silicon-Germanium Strained Layers and Heterostructures (Semiconductors and Semimetals Volume 74) signed and inscribed to previous owner Doctor Marshall Stoneham by author Suresh Jain in black ink to the front free end paper. Faux red leather binding, gilt spine and front cover lettering, the book is in near fine condition and is rare in this edition. Signed by Author(s).
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Compound Semiconductors Strained Layers and Devices
Published by Springer US, Springer US, 2000
ISBN 10: 0792377699 ISBN 13: 9780792377696
Language: English
£ 150.98
Convert currency£ 12.15 shipping from Germany to United KingdomQuantity: 1 available
Add to basketBuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
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Condition: New. pp. 200 Illus.
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Conducting Organic Materials and Devices (Semiconductors and Semimetals): Volume 81
Published by Elsevier Science 2007-08-01, 2007
ISBN 10: 0127521909 ISBN 13: 9780127521909
Language: English
£ 167.42
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£ 174.69
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Add to basketCondition: New. pp. 200.
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Conducting Organic Materials and Devices
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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£ 186.67
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£ 137.28
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£ 193.18
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Add to basketCondition: New. pp. 200.
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£ 191.54
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Paperback. Condition: Brand New. 349 pages. 9.30x6.20x0.80 inches. In Stock.
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Conducting Organic Materials and Devices (Volume 81) (Semiconductors and Semimetals, Volume 81)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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Conducting Organic Materials and Devices
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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£ 222.66
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£ 229.95
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CONDUCTING ORGANIC MATERIALS &
Published by Academic Press|Elsevier Science, 2007
ISBN 10: 0127521909 ISBN 13: 9780127521909
Language: English
£ 230.07
Convert currency£ 21.71 shipping from Germany to United KingdomQuantity: Over 20 available
Add to basketGebunden. Condition: New. Conducting polymers were discovered in 1970s, in Japan. Several breakthroughs have been made in the design and fabrication technology of the organic devices. This book describes the advances in these organic materials and devices.Conducting polymers wer.
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£ 121.84
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Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Preface. 1. Introduction. 2. Characterization and growth. 3. Strain and critical thickness. 4. Strain relaxation and defects. 5. Band structure and optical properties. 6. Electrical and magnetic properties. 7. Strained layer optoelectronic devices. 8. T.
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£ 121.84
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Add to basketGebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Preface. 1. Introduction. 2. Characterization and growth. 3. Strain and critical thickness. 4. Strain relaxation and defects. 5. Band structure and optical properties. 6. Electrical and magnetic properties. 7. Strained layer optoelectronic devices. 8. T.
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Compound Semiconductors Strained Layers and Devices
Published by Springer US, Springer New York Mär 2000, 2000
ISBN 10: 0792377699 ISBN 13: 9780792377696
Language: English
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
£ 143.61
Convert currency£ 30.41 shipping from Germany to United KingdomQuantity: 1 available
Add to basketBuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 356 pp. Englisch.
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Conducting Organic Materials and Devices
Published by Elsevier Science Ltd, 2007
ISBN 10: 0127521909 ISBN 13: 9780127521909
Language: English
Hardcover. Condition: Brand New. 1st edition. 198 pages. 10.00x6.75x0.75 inches. In Stock. This item is printed on demand.
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Compound Semiconductors Strained Layers and Devices
Published by Springer US Mrz 2000, 2000
ISBN 10: 0792377699 ISBN 13: 9780792377696
Language: English
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
£ 200.11
Convert currency£ 9.56 shipping from Germany to United KingdomQuantity: 2 available
Add to basketBuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them. 356 pp. Englisch.
