Compound Semiconductors Strained Layers and Devices: 7 (Electronic Materials Series, 7) - Hardcover

Hardcover

ISBN 10: 0792377699 ISBN 13: 9780792377696

Publisher: Springer, 2000

Synopsis

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu­ mulation of new materials and devices with enhanced performance made pos­ sible by strain. 1989-1999 have been very good years for the strained-Iayer­ devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break­ throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi­ ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per­ formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de­ scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

About this title

Synopsis

In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, "Compound Semiconductors Strained Layers and Devices" provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects.Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors.

The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.

Edition details

• Publisher: Springer
• Publication date: 2000
• Language: English
• ISBN 10: 0792377699
• ISBN 13: 9780792377696
• Binding: Hardcover
• Number of pages: 349
• Editor: Jain Suresh, Willander Magnus, Van Overstraeten R.