Wilfried Hansch (12 results)
Language: English
Published by Springer, 2011
- Softcover
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Language: English
Published by Springer 2011-12, 2011
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PF. Condition: New.
Language: English
Published by Springer, 2011
- Softcover
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Condition: New. pp. 288.
Language: English
Published by Springer-Verlag KG, 2004
- Hardcover
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Condition: Gut. Zustand: Gut | Seiten: 283 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
Language: English
Published by Springer Vienna, 2011
- Softcover
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of se…miconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.
Language: English
Published by Springer, 1991
- Hardcover
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hardcover. Condition: Very Good. Very Good. Dust Jacket may NOT BE INCLUDED.CDs may be missing. SHIPS FROM MULTIPLE LOCATIONS. book.
Language: English
Published by Springer, 2011
- Softcover
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Condition: new. Questo è un articolo print on demand.
Language: English
Published by Springer Vienna Dez 2011, 2011
- Softcover
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical…simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes. 288 pp. Englisch.
Language: English
Published by Springer, 2011
- Softcover
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Condition: New. Print on Demand pp. 288 95 Figures, 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.
Language: English
Published by Springer, 2011
- Softcover
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Condition: New. PRINT ON DEMAND pp. 288.
Language: English
Published by Springer Vienna, 2011
- Softcover
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for… the numerical simulation of semiconduct.
Language: English
Published by Springer, Springer Dez 2011, 2011
- Softcover
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simu…lation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 288 pp. Englisch.
