Seller: books4less (Versandantiquariat Petra Gros GmbH & Co. KG), Welling, Germany
gebundene Ausgabe. Condition: Gut. 450 Seiten; Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.); Schnitt und Einband sind etwas staubschmutzig; der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. Text in ENGLISCHER Sprache! Sprache: Englisch Gewicht in Gramm: 800.
Hardcover. Ex-library in GOOD condition with library-signature and stamp(s). Some traces of use. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. C-00715 3540125582 Sprache: Englisch Gewicht in Gramm: 1050.
Hardcover. Condition: Gut. 450 Seiten Guter Zustand/ Good Library binding. ha1031754 Sprache: Englisch Gewicht in Gramm: 820.
Seller: Ria Christie Collections, Uxbridge, United Kingdom
£ 96.88
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Condition: New. pp. 468.
Seller: Revaluation Books, Exeter, United Kingdom
Paperback. Condition: Brand New. reprint edition. 468 pages. 9.25x6.10x1.02 inches. In Stock.
Language: English
Published by Springer Berlin Heidelberg, 2011
ISBN 10: 3642691943 ISBN 13: 9783642691942
Seller: AHA-BUCH GmbH, Einbeck, Germany
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The origin of the development of integrated circuits up to VLSI is found in the invention of the transistor, which made it possible to achieve the ac tion of a vacuum tube in a semiconducting solid. The structure of the tran sistor can be constructed by a manufacturing technique such as the intro duction of a small amount of an impurity into a semiconductor and, in ad dition, most transistor characteristics can be improved by a reduction of dimensions. These are all important factors in the development. Actually, the microfabrication of the integrated circuit can be used for two purposes, namely to increase the integration density and to obtain an improved perfor mance, e. g. a high speed. When one of these two aims is pursued, the result generally satisfies both. We use the Engl ish translation 'very large scale integration (VLSIl' for 'Cho LSI' in Japanese. In the United States of America, however, similar technology is bei ng developed under the name 'very hi gh speed integrated circuits (VHSIl'. This also originated from the nature of the integrated circuit which satisfies both purposes. Fortunately, the Japanese word 'Cho LSI' has a wider meani ng than VLSI, so it can be used ina broader area. However, VLSI has a larger industrial effect than VHSI.
Seller: Mispah books, Redhill, SURRE, United Kingdom
Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Seller: Brook Bookstore On Demand, Napoli, NA, Italy
Condition: new. Questo è un articolo print on demand.
Language: English
Published by Springer Berlin Heidelberg Dez 2011, 2011
ISBN 10: 3642691943 ISBN 13: 9783642691942
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The origin of the development of integrated circuits up to VLSI is found in the invention of the transistor, which made it possible to achieve the ac tion of a vacuum tube in a semiconducting solid. The structure of the tran sistor can be constructed by a manufacturing technique such as the intro duction of a small amount of an impurity into a semiconductor and, in ad dition, most transistor characteristics can be improved by a reduction of dimensions. These are all important factors in the development. Actually, the microfabrication of the integrated circuit can be used for two purposes, namely to increase the integration density and to obtain an improved perfor mance, e. g. a high speed. When one of these two aims is pursued, the result generally satisfies both. We use the Engl ish translation 'very large scale integration (VLSIl' for 'Cho LSI' in Japanese. In the United States of America, however, similar technology is bei ng developed under the name 'very hi gh speed integrated circuits (VHSIl'. This also originated from the nature of the integrated circuit which satisfies both purposes. Fortunately, the Japanese word 'Cho LSI' has a wider meani ng than VLSI, so it can be used ina broader area. However, VLSI has a larger industrial effect than VHSI. 468 pp. Englisch.
Language: English
Published by Springer Berlin Heidelberg, 2011
ISBN 10: 3642691943 ISBN 13: 9783642691942
Seller: moluna, Greven, Germany
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. 1. lntroduction.- 1.1 The Significance of Semiconductor Integrated Circuits.- 1.2 Prospects of High-Density Integration.- 1.3 Device Dimensions and Density of Integration.- 1.4 Outline of the Microfabrication Technology.- 2. Electron Beam Lithography.- 2.1 .
Seller: Majestic Books, Hounslow, United Kingdom
Condition: New. Print on Demand pp. 468 377 Figures, 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.
Seller: Biblios, Frankfurt am main, HESSE, Germany
Condition: New. PRINT ON DEMAND pp. 468.
Language: English
Published by Springer, Springer Vieweg Dez 2011, 2011
ISBN 10: 3642691943 ISBN 13: 9783642691942
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -1. lntroduction.- 1.1 The Significance of Semiconductor Integrated Circuits.- 1.2 Prospects of High-Density Integration.- 1.3 Device Dimensions and Density of Integration.- 1.4 Outline of the Microfabrication Technology.- 2. Electron Beam Lithography.- 2.1 Background.- 2.2 Components for Electron-Beam Lithography.- 2.3 Software for Electron-Beam Lithography.- 2.4 Wafer and Writing Systems.- 3. Pattern Replication Technology.- 3.1 UV Replication Technologies.- 3.2 Deep-UV Projection System.- 3.3 X-Ray Lithography.- 3.4 Electron-Beam Projection.- 3.5 Radiation-Sensitive Resist for Microfabrication.- 4. Mask Inspection Technology.- 4.1 Principles of Mask Inspection.- 4.2 Mask Inspection Systems.- 5. Crystal Technology.- 5.1 Overview.- 5.2 Impurities in Si Crystals.- 5.3 Wafer Bow and Warpage.- 5.4 Thermally Induced Microdefects.- 5.5 Epitaxial Growth.- 6. Process Technology.- 6.1 Dry Etching.- 6.2 Beam Annealing.- 6.3 Thin-Film Deposition Techniques.- 6.4 Metallization.- 6.5 Evaluation of Gate Oxide Film.- 6.6 Super Clean Environment.- 7. Fundamentals of Test and Evaluation.- 7.1 Testing and Evaluation of the Device Design.- 7.2 Device Analysis and Evaluation.- 7.3 Device Testing.- 8. Basic Device Technology.- 8.1 Background.- 8.2 Limitations for Miniaturization.- 8.3 Prediction of Device Performance Advancements.- 8.4 Examples of Device Structure.- 8.5 Device Structure.- References.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 468 pp. Englisch.