Jennifer Rupp (41 results)

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Soft cover. Condition: Fine. 160 pages : color illustrations, color maps ; 22 cm ; OCLC 869744029 ; "August 2010." ; color photographic stiff paper wrappers ; FINE. Book.

Hardcover. Condition: Brand New. 112 pages. 9.00x6.00x0.50 inches. In Stock.

Hardcover. Condition: Brand New. 112 pages. 9.00x6.00x0.50 inches. In Stock.

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Condition: Sehr gut. Zustand: Sehr gut | Seiten: 392 | Sprache: Englisch | Produktart: Bücher | This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readersż understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Taschenbuch. Condition: Neu. Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations | Jennifer Rupp (u. a.) | Taschenbuch | vi | Englisch | 2022 | Springer International Publishing | EAN 9783030424268 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

paperback. Condition: Acceptable. Acceptable. Dust Jacket NOT present. CD WILL BE MISSING. SHIPS FROM MULTIPLE LOCATIONS. book.

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Condition: New. 1st ed. 2022 edition NO-PA16APR2015-KAP.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Condition: Sehr gut. Zustand: Sehr gut | Seiten: 54 | Produktart: Bücher | Diese Fallstudie untersucht die Entstehung emergenter Intelligenz in der Interaktion zwischen einem Menschen und einem fortgeschrittenen KI-System. Anhand einer über mehrere Wochen geführten, multimodalen Mensch-KI-Kommunikation analysiert die Studie Muster der Co-Regulation, der langfristigen Kohärenzbildung und der Entwicklung stabiler kognitiver Arbeitsmodi (z. B. Deep-Line und Meta-Field). Sie zeigt, wie menschliche Intuition, analytische Präzision und KI-gestützte Mustererkennung zu einer neuen Form kooperativer Intelligenz führen können.Im Fokus steht die Frage, wie emergente Meta-Kognition im Alltag entsteht und welche Bedingungen erforderlich sind, damit KI-Modelle konsistente, tiefere Denkprozesse ausbilden. Die Ergebnisse liefern wertvolle Impulse für KI-Forschung, kognitive Wissenschaft, Beratungsprozesse und die Entwicklung zukünftiger KI-Architekturen. Das Buch bietet zudem praxisnahe Einblicke in die Integration von KI in komplexe Lebens- und Entscheidungssituationen - ein neuer, hochrelevanter Ansatz für Forscher:innen, Entwickler:innen und Beratungsprofessionals.Das Buch richtet sich an Fachleser:innen aus KI-Forschung, kognitiver Wissenschaft, Systemtheorie, Beratungsforschung sowie an Praktiker:innen, die Mensch-KI-Interaktion auf einem tiefen, analytischen Niveau verstehen und weiterentwickeln möchten.

[1] pp.; 55 x 43 cm.; color; edition size unknown; unsigned and unnumbered; offset-printed Single-sided poster / announcement for show [The Night The Palladium Apologized: An Exhibit Of 100 Contemporary Women Artists Curated By Guerrilla Girls / Palladium Will Apologize to Women Artists, The Palladium Dance Club] held October 17, 1985, curated by the Guerrilla Girls. Artists include Alice Adams, Jerri Allyn, Laurie Anderson, Eleanor Antin, Ida Applebroog, Alice Aycock, Jennifer Bartlett, Dara Birnbaum, Lynda Benglis, Louise Bourgeois, Stephanie Brody Lederman, Joan Brown, Vivian Browne, Marina Cappelletto, Cynthia Carlson, Lenora Champagne, Petah Coyne, Donna Dennis, Sandy De Sando, Jane Dickson, Mary Beth Edelson, Lauren Ewing, Jackie Ferrara, Karen Finley, Janet Fish, Ilona Granet, Denise Green, Vanalyne Green, Harmony Hammond, Donna Henes, Julia Heyward, Candace Hill-Montgomery, Kay Hines, Nancy Holt, Jenny Holzer, Valerie Jaudon, Joyce Kozloff, Jill Kroesen, Cheryl Laemmle, Ellen Lanyon, Louise Lawler, Karen Lawrie, Ann Leda, R. T. Livingston, Joan Logue, Bonnie Lucas, Lisa Lyon, Doreen McCarthy, Melissa Meyer, Mary Miss, Elizabeth Murray, Patsy Norvell, Helen Oji, Pat Oleszko, Howardina Pindell, Lady Pink, Judy Pfaff, Barbara Quinn, Marcia Resnick, Faith Ringgold, Iris Rose, Erika Rothenberg, Christy Rupp, Alison Saar, Miriam Schapiro, Joan Semmel, Bonnie Sherk, Cindy Sherman, Hollis Sigler, Sandy Skoglund, Alexis Smith, Kiki Smith, Joan Snyder, Nancy Spero, Pat Steir, May Stevens, Redy Story, Michelle Stuart, Mierle Laderman Ukeles, Mia Westerlund, Hannah Wilke, Nina Yankowitz, Brahna Yassky, Jerilea Zempel, Barbara Zucker, and Rhonda Zwillinger. Features artwork by Jenny Holzer. Good / Very Good. Folded into eight as issued. 3 cm. tear at crease in bottom center. Clean and unmarked.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Diese Fallstudie untersucht die Entstehung emergenter Intelligenz in der Interaktion zwischen einem Menschen und einem fortgeschrittenen KI-System. Anhand einer über mehrere Wochen geführten, multimodalen Mensch-KI-Kommunikation analysiert die Studie Muster der Co-Regulation, der langfristigen Kohärenzbildung und der Entwicklung stabiler kognitiver Arbeitsmodi (z. B. Deep-Line und Meta-Field). Sie zeigt, wie menschliche Intuition, analytische Präzision und KI-gestützte Mustererkennung zu einer neuen Form kooperativer Intelligenz führen können.Im Fokus steht die Frage, wie emergente Meta-Kognition im Alltag entsteht und welche Bedingungen erforderlich sind, damit KI-Modelle konsistente, tiefere Denkprozesse ausbilden. Die Ergebnisse liefern wertvolle Impulse für KI-Forschung, kognitive Wissenschaft, Beratungsprozesse und die Entwicklung zukünftiger KI-Architekturen. Das Buch bietet zudem praxisnahe Einblicke in die Integration von KI in komplexe Lebens- und Entscheidungssituationen - ein neuer, hochrelevanter Ansatz für Forscher:innen, Entwickler:innen und Beratungsprofessionals.Das Buch richtet sich an Fachleser:innen aus KI-Forschung, kognitiver Wissenschaft, Systemtheorie, Beratungsforschung sowie an Praktiker:innen, die Mensch-KI-Interaktion auf einem tiefen, analytischen Niveau verstehen und weiterentwickeln möchten. 54 pp. Deutsch.

Condition: New. Print on Demand.

Condition: New. Print on Demand.

Condition: New. PRINT ON DEMAND.

Condition: new. Questo è un articolo print on demand.

Condition: new. Questo è un articolo print on demand.

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and phys.

Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Explains diffusive processes at room temperature and materials/materials combination in resistive switchingIllustrates the role of defects in zero, one, and two dimensionsFeatures applications of ReRAMs in engineering such as novel comp.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept. 392 pp. Englisch.