Adarsh Sandhu (28 results)

HRD. Condition: New. New Book. Shipped from UK. Established seller since 2000.

Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

HRD. Condition: New. New Book. Shipped from UK. Established seller since 2000.

Condition: New. In English.

Hardback. Condition: New. New copy - Usually dispatched within 4 working days.

Gebunden. Condition: New.

Condition: New.

Condition: Used. pp. xxvi + 460 1st Edition.

Condition: Used. pp. xxvi + 460 Illus.

Condition: Used. pp. xxvi + 460.

Condition: New. In English.

Taschenbuch. Condition: Neu. Wide Bandgap Semiconductors | Fundamental Properties and Modern Photonic and Electronic Devices | Kiyoshi Takahashi (u. a.) | Taschenbuch | xxv | Englisch | 2010 | Springer | EAN 9783642079948 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Hardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condition: New. pp. 486.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The p-n junction was invented in the rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that 'synthesis of high quality GaN crystals would eventually enable p-type doping' and in 1989 he succeeded in fabricating the world's rst GaN p-n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey 'from the nitride wilderness' to the rst experimental results of blue emission from GaN p-n junctions: Japan's major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p-n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti c, industrial and social impli- tions.…

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The p-n junction was invented in the rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that 'synthesis of high quality GaN crystals would eventually enable p-type doping' and in 1989 he succeeded in fabricating the world's rst GaN p-n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey 'from the nitride wilderness' to the rst experimental results of blue emission from GaN p-n junctions: Japan's major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p-n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti c, industrial and social impli- tions.…

Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Paperback. Condition: Brand New. 486 pages. 9.00x6.00x1.15 inches. In Stock.

Hardcover. Condition: Brand New. 150 pages. 10.28x7.36x0.59 inches. In Stock. This item is printed on demand.

Hardback. Condition: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.

Condition: new. Questo è un articolo print on demand.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices. 488 pp. Englisch.…

Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices. 488 pp. Englisch.…

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The p¿n junction was invented in the rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that ¿synthesis of high quality GaN crystals would eventually enable p-type doping¿ and in 1989 he succeeded in fabricating the world¿s rst GaN p¿n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey ¿from the nitride wilderness¿ to the rst experimental results of blue emission from GaN p¿n junctions: Japan¿s major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p¿n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti c, industrial and social impli- tions.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 488 pp. Englisch. …

Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The p¿n junction was invented in the rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that ¿synthesis of high quality GaN crystals would eventually enable p-type doping¿ and in 1989 he succeeded in fabricating the world¿s rst GaN p¿n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey ¿from the nitride wilderness¿ to the rst experimental results of blue emission from GaN p¿n junctions: Japan¿s major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p¿n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti c, industrial and social impli- tions.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 488 pp. Englisch.…

Condition: New. Print on Demand pp. 486.

Condition: New. PRINT ON DEMAND pp. 486.