Simulation Case Study Semiconductors by Murti Sarma (9 results)
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Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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Paperback. Condition: Brand New. 116 pages. 8.66x5.91x0.27 inches. In Stock.
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Seller: preigu, Osnabrück, Germanypreigu
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Taschenbuch. Condition: Neu. A Simulation Case Study Of Semiconductors For Advanced Processors | A graduate useful study | N. S. Murti Sarma (u. a.) | Taschenbuch | 116 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659949371 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Nor…derstedt, info[at]bod[dot]de | Anbieter: preigu.
Language: English
Published by LAP LAMBERT Academic Publishing Okt 2016, 2016
- Softcover
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The electrical characteristic of bipolar transistor are studied using gummel plot focusing on gain of the structure. For high speed considerations we are analyzing the small signal model using scattering parameters. The gain of this… work is approximate to 200 means high gain represents low leakages in the structure. The scattering parameters describe the high speed considerations. And gummel plot describes the currents verses base emitter voltage in common emitter configuration. In this graph we didn't get any leakages but other effects are shown. The gain plot is constant for 0.5V from 0.3V to 0.8V. This proposed BJT is used in advanced processors of high speed considerations and integrated circuits. 116 pp. Englisch.
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Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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- Softcover
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Seller: moluna, Greven, Germanymoluna
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: S. Murti Sarma N.N.S.Murti Sarma is a professor of Electronics and communications Engineering of Hosting College. P.Pradeep is identifed as a successful graduate research scholar by research assessment…committee . Dr.S.P.Venumadhav.
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Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
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Language: English
Published by LAP LAMBERT Academic Publishing Okt 2016, 2016
- Softcover
- Print on Demand
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The electrical characteristic of bipolar transistor are studied using gummel plot focusing on gain of the structure. For high speed considerations we are analyzing the small signal model using scattering parameters. The gain of this wor…k is approximate to 200 means high gain represents low leakages in the structure. The scattering parameters describe the high speed considerations. And gummel plot describes the currents verses base emitter voltage in common emitter configuration. In this graph we didn't get any leakages but other effects are shown. The gain plot is constant for 0.5V from 0.3V to 0.8V. This proposed BJT is used in advanced processors of high speed considerations and integrated circuits.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 116 pp. Englisch.
- Softcover
- Print on Demand
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The electrical characteristic of bipolar transistor are studied using gummel plot focusing on gain of the structure. For high speed considerations we are analyzing the small signal model using scattering parameters. The gain of this work… is approximate to 200 means high gain represents low leakages in the structure. The scattering parameters describe the high speed considerations. And gummel plot describes the currents verses base emitter voltage in common emitter configuration. In this graph we didn't get any leakages but other effects are shown. The gain plot is constant for 0.5V from 0.3V to 0.8V. This proposed BJT is used in advanced processors of high speed considerations and integrated circuits.
