Recent Trend Performance Analysis by Agarwal Amit (4 results)

Taschenbuch. Condition: Neu. Recent trend and Performance Analysis of Multi-Gate MOSFET | Amit Agarwal (u. a.) | Taschenbuch | 92 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9786139952960 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. …

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Scaling has played an important role in reducing the size of the transistor so as to govern the Moore's law, but due to down scaling of the transistor size there is deterioration in the performance of the transistor. In this book we have discussed such effects and tried to minimise these effects. We have discussed about the recent available technology i.e different gated structures such as single gate, double gate, triple gate and gate all around which will control the electrostatic potential in the channel and reduces these short channel effects. Also we have varied different physical parameters so as to reduce these quantum effects. 92 pp. Englisch.…

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Agarwal AmitM.tech in the field of Digital Electronics and Advance Communication and B.Tech in the field of Electronics and Communication from Sikkim Manipal Institute of Technology, Sikkim Manipal University, Sikkim, India. My recen.…

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Scaling has played an important role in reducing the size of the transistor so as to govern the Moore's law, but due to down scaling of the transistor size there is deterioration in the performance of the transistor. In this book we have discussed such effects and tried to minimise these effects. We have discussed about the recent available technology i.e different gated structures such as single gate, double gate, triple gate and gate all around which will control the electrostatic potential in the channel and reduces these short channel effects. Also we have varied different physical parameters so as to reduce these quantum effects.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 92 pp. Englisch.…