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£ 47.72
£ 15.49 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketHardcover. Condition: New.
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Plasma Etching Processes for Cmos Devices Realization
Language: English
Published by Elsevier Science Ltd, 2017
ISBN 10: 1785480960 ISBN 13: 9781785480966
Hardcover. Condition: Brand New. 100 pages. 9.25x6.25x0.75 inches. In Stock.
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Plasma Etching Processes for CMOS Devices Realization
Language: English
Published by ISTE Press - Elsevier, 2017
ISBN 10: 1785480960 ISBN 13: 9781785480966
Condition: New. pp. 136.
-
Plasma Etching Processes for CMOS Devices Realization
Language: English
Published by ISTE Press - Elsevier, 2017
ISBN 10: 1785480960 ISBN 13: 9781785480966
Condition: New. pp. 136.
-
Plasma Etching Processes for CMOS Devices Realization
Language: English
Published by ISTE Press Ltd - Elsevier Inc, 2017
ISBN 10: 1785480960 ISBN 13: 9781785480966
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Seller rating 5 out of 5 stars
£ 60.17
£ 14.25 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketHardback. Condition: New. New copy - Usually dispatched within 4 working days.
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Plasma Etching Processes for CMOS Devices Realization
Language: English
Published by ISTE Press - Elsevier, 2017
ISBN 10: 1785480960 ISBN 13: 9781785480966
Condition: New. pp. 136.
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Condition: new. Questo è un articolo print on demand.
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Plasma Etching Processes for CMOS Devices Realization
Language: English
Published by ISTE Press - Elsevier, 2017
ISBN 10: 1785480960 ISBN 13: 9781785480966
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent.Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography.This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Englisch.
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Plasma Etching Processes for CMOS Devices Realization
Language: English
Published by ISTE Press - Elsevier, 2017
ISBN 10: 1785480960 ISBN 13: 9781785480966
Buch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent.Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography.This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization.
