Published by World Scientific Publishing Company, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
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Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Co Pte Ltd, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Add to basketPaperback. Condition: Brand New. reprint edition. 632 pages. 9.02x6.22x1.30 inches. In Stock.
Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Published by World Scientific Publishing Company Feb 2007, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
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Add to basketTaschenbuch. Condition: Neu. Neuware - A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
Seller: GreatBookPrices, Columbia, MD, U.S.A.
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
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Published by World Scientific Publishing Co Pte Ltd, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
Seller: GreatBookPrices, Columbia, MD, U.S.A.
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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Published by World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
Seller: Revaluation Books, Exeter, United Kingdom
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Add to basketHardcover. Condition: Brand New. illustrated edition. 632 pages. 9.50x6.50x1.25 inches. In Stock.
Published by World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Language: English
Seller: moluna, Greven, Germany
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Add to basketKartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. KlappentextrnrnA reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first c.
Published by World Scientific Publishing Company, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
Language: English
Seller: moluna, Greven, Germany
£ 246.20
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Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Deals with the MOS Field Effect Transistor models that are derived from basic semiconductor theory. This book discusses how to measure device model parameters required for circuit simulations. It emphasizes the assumptions used to arrive at the models, so t.
Seller: AHA-BUCH GmbH, Einbeck, Germany
£ 257.81
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Add to basketBuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology.