Materials Reliability Handbook Semiconductor (21 results)

Hardcover. Condition: gut. 2013. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms. In englischer Sprache. 616 pages. 3,8 x 15,5 x 23 cm.

Hardcover. Condition: gut. 2012. This book covers reliability procedures for lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Addresses reliability engineering, materials, reliability testing and electronic characterization.Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms. Content: Preface Part 1: Materials Issues and Reliability of Optical Devices 1. Reliability Testing of Semiconductor Optical Devices 2. Failure Analysis of Semiconductor Optical Devices 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes 8. InGaN Laser Diode Degradation 9. Radiation-enhanced Dislocation Glide - The Current Status of Research 10. Mechanism of Defect Reactions in Semiconductors Part 2: Materials Issues and Reliability of Electron Devices 11. Reliability Studies in the Real World 12. Strain Effects in AlGaN/GaN HEMTs 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability 16. Reliability Simulation 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy 18. Reliability Study of InP-Based HBTs Operating at High Current Density Index Zusatzinfo 30 Tables, black and white; XVI, 616 p. Verlagsort New York, NY Sprache englisch Maße 155 x 235 mm Naturwissenschaften Physik Astronomie Optik Techniker Elektrotechnik Energietechnik Technik Maschinenbau Devices failure analysis Devices reliability Electrical devices degradation failure Electronic device reliability Materials reliability book Optical devices degradation failure Semiconductor devices failure Semiconductor Optical Devices, Reliability Testing ISBN-10 1-4614-4336-9 / 1461443369 ISBN-13 978-1-4614-4336-0 / 9781461443360 In englischer Sprache. 616 pages. 155 x 235 mm.

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Taschenbuch. Condition: Neu. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices | Stephen J. Pearton (u. a.) | Taschenbuch | xvi | Englisch | 2014 | Springer US | EAN 9781493901197 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

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Paperback. Condition: Brand New. 632 pages. 9.25x6.10x1.42 inches. In Stock.

Hardcover. Condition: Brand New. 2013 edition. 631 pages. 9.25x6.25x1.50 inches. In Stock.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms. 632 pp. Englisch.

Condition: new. Questo è un articolo print on demand.

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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms. 616 pp. Englisch.

Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.Libri GmbH, Europaallee 1, 36244 Bad Hersfeld 632 pp. Englisch.

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature.The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 632 pp. Englisch.