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Materials Process Characterization (63 results)
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Condition: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,650grams, ISBN:0849389577.
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Condition: New. 1st edition NO-PA16APR2015-KAP.
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Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability (Synthesis Lectures on Solid State Materials and Devices)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 28.66
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In English.
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Hardcover. Condition: Fine. 1st Edition. No Markings.
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Condition: As New. Unread book in perfect condition.
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Condition: New. Satisfaction Guaranteed or your money back.
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Advanced Characterization and On-Line Process Monitoring of Additively Manufactured Materials and Components
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 62.07
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Advanced Characterization and On-Line Process Monitoring of Additively Manufactured Materials and Components
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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Hf-BASED HIGH-k DIELECTRICS: Process Development, Performance Characterization, and Reliability (Synthesis Lectures on Solid State Materials and Devices)
Language: English
Published by Morgan and Claypool Publishers, 2005
ISBN 10: 1598290045 ISBN 13: 9781598290042
Paperback. Condition: New.
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Advanced Characterization and On-Line Process Monitoring of Additively Manufactured Materials and Components
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: As New. Unread book in perfect condition.
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Condition: very_good. This book is in Very Good condition. The cover and pages have minor shelf wear. Binding is tight and pages are intact.
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Advanced Characterization and On-Line Process Monitoring of Additively Manufactured Materials and Components
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
Seller rating 5 out of 5 stars
Hardback. Condition: New.
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Purification Process and Characterization of Ultra High Purity Metals: Application of Basic Science to Metallurgical Processing (Springer Series in Materials Processing)
Book 3 of 4: Springer Series in Materials ProcessingSeller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 96.15
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Paperback. Condition: Brand New. 614 pages. 9.25x6.00x1.39 inches. In Stock.
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Condition: Sehr gut. Zustand: Sehr gut | Seiten: 288 | Sprache: Englisch | Produktart: Bücher | This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Taschenbuch. Condition: Neu. Fundamentals of Bias Temperature Instability in MOS Transistors | Characterization Methods, Process and Materials Impact, DC and AC Modeling | Souvik Mahapatra | Taschenbuch | xvi | Englisch | 2016 | Springer | EAN 9788132234241 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Hardcover. Condition: Good. Ex-library book, usual markings. Clean copy in good condition. Quick dispatch from UK seller.
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
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Hardcover. Condition: Like New. Like New. book.
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Hardcover. Condition: Brand New. 211 pages. 9.61x6.93x0.75 inches. In Stock.
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Condition: Hervorragend. Zustand: Hervorragend | Seiten: 736 | Sprache: Englisch | Produktart: Bücher | The collection focuses on the advancements of characterization of minerals, metals, and materials and the applications of characterization results on the processing of these materials. Advanced characterization methods, techniques, and new instruments are emphasized. Areas of interest include, but are not limited to:· Extraction and processing of various types of minerals, process-structure-property relationship of metal alloys, glasses, ceramics, polymers, composites, semiconductors, and carbon using functional and structural materials.· Novel methods and techniques for characterizing materials across a spectrum of systems and processes. · Characterization of mechanical, thermal, electrical, optical, dielectric, magnetic, physical, and other properties of materials. · Characterization of structural, morphological,and topographical natures of materials at micro- and nano- scales. · Characterization of extraction and processing including process development and analysis. · Advances in instrument developments for microstructure analysis and performance evaluation of materials, such as computer tomography (CT), X-ray and neutron diffraction, electron microscopy (SEM, FIB, TEM), and spectroscopy (EDS, WDS, EBSD) techniques. · 2D and 3D modelling for materials characterization.
