Condition: Good. 242 pp., Hardcover, ex library, else text clean & binding tight. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.
Seller: Anybook.com, Lincoln, United Kingdom
Condition: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,650grams, ISBN:0849389577.
Hardcover. Condition: Very Good. Dust Jacket Condition: No Dust Jacket. First Edition. Name penned to top edge. A nice, crisp copy. ; 8vo ; 601 pages.
Condition: New.
Seller: Ria Christie Collections, Uxbridge, United Kingdom
£ 27.99
Quantity: Over 20 available
Add to basketCondition: New. In English.
Condition: New. 1st edition NO-PA16APR2015-KAP.
Seller: Feldman's Books, Menlo Park, CA, U.S.A.
First Edition
Hardcover. Condition: Fine. 1st Edition. No Markings.
Condition: New.
Seller: Ria Christie Collections, Uxbridge, United Kingdom
£ 60.76
Quantity: Over 20 available
Add to basketCondition: New. In.
Language: English
Published by Morgan and Claypool Publishers, 2005
ISBN 10: 1598290045 ISBN 13: 9781598290042
Seller: The Book Spot, Sioux Falls, MN, U.S.A.
Paperback. Condition: New.
Seller: Books Puddle, New York, NY, U.S.A.
Condition: New.
Seller: Ria Christie Collections, Uxbridge, United Kingdom
£ 94.30
Quantity: Over 20 available
Add to basketCondition: New. In.
Seller: Revaluation Books, Exeter, United Kingdom
Paperback. Condition: Brand New. 614 pages. 9.25x6.00x1.39 inches. In Stock.
Condition: New. pp. 286.
Hardcover. Condition: Good. Ex-library book, usual markings. Clean copy in good condition. Quick dispatch from UK seller.
Taschenbuch. Condition: Neu. Fundamentals of Bias Temperature Instability in MOS Transistors | Characterization Methods, Process and Materials Impact, DC and AC Modeling | Souvik Mahapatra | Taschenbuch | xvi | Englisch | 2016 | Springer | EAN 9788132234241 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Language: English
Published by MP-HNR Hanser Publishers, 2023
ISBN 10: 1569909016 ISBN 13: 9781569909010
Seller: PBShop.store UK, Fairford, GLOS, United Kingdom
HRD. Condition: New. New Book. Shipped from UK. Established seller since 2000.
Language: English
Published by Springer India, Springer India, 2016
ISBN 10: 8132234243 ISBN 13: 9788132234241
Seller: AHA-BUCH GmbH, Einbeck, Germany
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Language: English
Published by Springer India, Springer India, 2015
ISBN 10: 8132225074 ISBN 13: 9788132225072
Seller: AHA-BUCH GmbH, Einbeck, Germany
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Condition: Sehr gut. Zustand: Sehr gut | Seiten: 288 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
Hardcover. Condition: Like New. Like New. book.
Paperback. Condition: Brand New. reprint edition. 269 pages. 9.25x6.10x0.68 inches. In Stock.
Seller: HPB-Red, Dallas, TX, U.S.A.
Hardcover. Condition: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority!
Seller: ALLBOOKS1, Direk, SA, Australia
Brand new book. Fast ship. Please provide full street address as we are not able to ship to P O box address.
Condition: New. pp. 269.
Seller: UK BOOKS STORE, London, LONDO, United Kingdom
Condition: New. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 7-12 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
Paperback. Condition: Brand New. reprint edition. 269 pages. 9.25x6.10x0.68 inches. In Stock.
Seller: Phatpocket Limited, Waltham Abbey, HERTS, United Kingdom
Condition: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.